Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 219-223

  Bruno, Giovanni ^a   Losurdo, Maria ^a   Giangregorio, Maria M ^a   Capezzuto, Pio ^a   Brown, April S ^b   Kim, Tong Ho ^b   Choi, Soojeong ^b  

^a CNR   (Italy)

^b Duke University   (United States)

Author keywords

Epitaxy; GaN; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PLASMA APPLICATIONS; SILICON CARBIDE;

NUCLEATION MECHANISM; PLASMA-ASSISTED METHODS; SPECTROSCOPIC ELLIPSOMETRY;

GALLIUM NITRIDE;

EID: 33750518809     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.129     Document Type: Article

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