Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 959-965

  Darakchieva, V ^a   Monemar, B ^a   Usui, A ^b   Saenger, M ^c   Schubert, M ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b FURUKAWA CO LTD   (Japan)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

A1. GaN bulk; A1. High resolution x ray diffraction; A1. Lattice parameters; A1. Point and extended defects; B3. Hydride Halide vapor phase epitaxy

Indexed keywords

CONCENTRATION (PROCESS); LATTICE CONSTANTS; PARAMETER ESTIMATION; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

GAN BULK; HIGH RESOLUTION X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 39149110974     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.130     Document Type: Article

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