Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N2 pressure

Journal of Crystal Growth

Volumn 178, Issue 1-2, 1997, Pages 174-188

  Porowski, S ^a   Grzegory, I ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

AlN; GaN; Homoepitaxy; InN; Solution crystal growth; Thermodynamics

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; HIGH PRESSURE EFFECTS; MELTING; NITRIDES; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; SOLUBILITY; THERMODYNAMIC STABILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SOLUTIONS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE; HOMOEPITAXY;

SEMICONDUCTOR GROWTH; NITRIDES;

EID: 0031150309     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00072-9     Document Type: Article

References (37)

1. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys. 28 (1989) 2112.
2. S. Nakamura, T. Mukai, M. Senoh and N. Iwasa, Jpn. J. Appl. Phys. 31 (1992) 139.
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Appl. Phys. Lett. 69 (1996) 1477.
4. J.A. Van Vechten, Phys. Rev. B 7 (1973) 1479.
5. I. Grzegory, S. Krukowski, J. Jun, M. Bockowski, M. Wroblewski and S. Porowski, Proc. XX AIRAPT Conf., Colorado Springs (1993).
6. W. Class, Contract Rep. NASA-Cr-1171 (1968).
7. J. Karpinski, J. Jun and S. Porowski, J. Crystal Growth 66 (1984) 1.
8. J. Karpinski and S. Porowski, J. Crystal Growth 66 (1984) 11.
9. G.A. Slack and T.F. Mac Nelly, J. Crystal Growth 34 (1976) 276.
10. R.D. Jones and K. Rose, CALPHAD 8 (1984) 343.
11. J.B. Mac Chesney, P.M. Bridenbaugh and P.S. O'Connor, Mater. Res. Bull. 5 (1970) 783.
12. A.M. Vorob'ev, G.V. Evseeva and L.V. Zenkevich, Russ. J. Phys. Chem. 45 (1971) 1501.
13. A.M. Vorob'ev, G.V. Evseeva and L.V. Zenkevich, Russ. J. Phys. Chem. 47 (1973) 1616.
14. S.P. Gordienko, Russ. J. Phys. Chem. 51 (1977) 315.
15. I. Grzegory, High Pressure Science and Technology, Proc. Joint XV AIRAPT and XXXV EHPRG Conf. Ed. W. Trzeciakowski (World Scientific, Singapore, 1996) p. 14.
16. W.A. Harrison, Electronic Structure and Properties of Solids (Freeman, San Francisco, 1980).
17. W.P. Glushko et al., in: Termodinamitcheskije Svojstwa Individualnych Veshtchestv (Nauka, Moscow, 1979).
18. I. Grzegory, J. Jun, M. Bockowski, St. Krukowski, M. Wroblewski, B. Lucznik and S. Porowski, J. Phys. Chem. Solids 56 (1995) 639-647.
19. M. Leszczynski, I. Grzegory and M. Bockowski, J. Crystal Growth 126 (1993) 601.
20. M. Leszczynski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, J. Jasinski and J.M. Baranowski, Acta Physica Polonica A 88 (1995) 799.
21. M. Leszczynski, I. Grzegory, H. Teisseyre, T. Suski, M. Bockowski, J. Jun, J.M. Baranowski, S. Porowski and J. Domagala, J. Crystal Growth 169 (1996) 235.
22. Z. Liliental-Weber, C. Kisielowski, X. Liu, L. Schloss, J. Washborn, E.R. Weber, I. Grzegory, M. Bockowski, J. Jun, T. Suski and S. Porowski, Workshop on GaN and Related Materials, Nagoya (1995).
23. G. Nowak and J. Zak, unpublished.
24. F.A. Ponce, D.P. Bour, W. Götz, N.M. Johnson, H.I. Helava, I. Grzegory, J. Jun and S. Porowski, Appl. Phys. Lett. 68 (1996) 917.
25. P. Perlin, J. Camasel, W. Knap, T. Talercio, J.C. Chervin, T. Suski, I. Grzegory and S. Porowski, Appl. Phys. Lett. 67 (1995) 2524.
26. P. Boguslawski, E. Briggs and J. Bernholz, Phys. Rev. B 51 (1995) 17255.
27. J. Neugebauer and C.G. Van de Walle, Phys. Rev. B 50 (1994) 8067.
28. P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernholz, J.C. Chervin, A. Polian and T.D. Moustakas, Phys. Rev. Lett. 75 (1995) 296.
29. H. Teisseyre, P. Perlin, M. Leszczynski, T. Suski, I. Grzegory, J. Jun, S. Porowski and T.D. Moustakas, J. Appl. Phys. 76 (1994) 4909.
30. K. Pakula, A. Wysmolek, K.P. Korona, J.M. Baranowski, R. Stepniewski, I. Grzegory, M. Bockowski, J. Jun, S. Krukowski, M. Wroblewski and S. Porowski, Solid State Commun. 97 (1996) 919.
31. H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, M. Bockowski, S. Krukowski, B. Lucznik, S. Porowski, M. Kamp, M. Mayer, A. Pelzmann and G. Karczewski, presented at the 1st European GaN Workshop, Rigi, 1996.
32. J.M. Baranowski and S. Porowski, Proc. XXIII Int. Conf. on Semiconductor Physics, Eds. M. Schaffen and A. Zimmermann (World Scientific, Singapore, 1996) p. 497.
33. I. Ivanov, A. Henry, B. Monemar and J.M. Baranowski, unpublished result.
34. M. Godlewski, A. Wysmolek, K. Pakula, J.M. Baranowski, I. Grzegory, J. Jun, S. Porowski, J.P. Bergman and B. Monemar, Proc. Int. Symp. on Blue Laser and Light Emitting Diodes, Eds. A. Yoshikawa, K. Kishino, M. Kobayashi and T. Yasuda (Ohmsha, Japan, 1996) p. 356.
35. I. Grzegory, M. Bockowski and J. Jun, High Pressure Res. 10 (1992) 288.
36. M. Bockowski, private communication.
37. M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula and J.M. Baranowski, Appl. Phys. Lett. 69 (1996) 73.