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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2601-2604

Two-electron transition spectroscopy of shallow donors in bulk GaN

(5) Paskov, P P a Monemar, B a Toropov, A b Bergman, J P a Usui, A c

a LINKÖPING UNIVERSITY (Sweden)

b IOFFE INSTITUTE (Russian Federation)

c FURUKAWA CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK GAN; DONOR BINDING; DONOR-BOUND EXCITONS; EMISSION LINES; EXCITED STATES; HIGH-QUALITY; HYDRIDE VAPOR PHASE EPITAXY; NITRIDE SEMICONDUCTORS; OPTICAL SELECTION RULES; PHOTOLUMINESCENCE (PL); POLARIZATION PROPERTIES; RECOMBINATION DYNAMICS; RECOMBINATION PROCESSES; SHALLOW DONORS; TIME-RESOLVED PL MEASUREMENT;

BINDING ENERGY; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; EXCITONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NITRIDES; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; VAPOR PHASE EPITAXY;

LUMINESCENCE;

EID: 39149090125 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200674901 Document Type: Conference Paper

Times cited : (23)

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