Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

Microelectronics Journal

Volumn 37, Issue 4, 2006, Pages 363-370

  Sghaier, N ^a   Trabelsi, M ^a   Yacoubi, N ^a   Bluet, J M ^b   Souifi, A ^b   Guillot, G ^b   Gaquiere C ^c   DeJaeger, J C ^c  

^a Institut Preparatoire aux Etudes d'Ingenieurs de Nabeul   (Tunisia)

^b UNIVERSITÉ DE LYON   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

AlGaN GaN HEMT; Conductance dispersion; Current instabilities; Defects; Random telegraph signal

Indexed keywords

DEFECTS; ELECTRON TRAPS; SIGNAL PROCESSING; SILICON; SUBSTRATES; TELEGRAPH INTERFERENCE;

ALGAN/GAN HEMT; CONDUCTANCE DISPERSION; CURRENT INSTABILITIES; RANDOM TELEGRAPH SIGNAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 32544456294     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.05.014     Document Type: Article

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