Simulations of direct-die-attached microchannel coolers for the thermal management of GaN-on-SiC microwave amplifiers

IEEE Transactions on Components and Packaging Technologies

Volumn 28, Issue 4, 2005, Pages 797-809

  Calame, Jeffrey P ^a   Myres, Robert E ^b   Wood, Frank N ^b   Binari, Steven C ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Cooling; Fluid flow; High electron mobility transistor (HEMT); Microassembly; Modulation doped field effect transistor (MODFET); Monolithic microwave integrated circuit (MMIC) amplifiers; Stress; Temperature

Indexed keywords

CHIP SCALE PACKAGES; COMPUTER SIMULATION; FINITE ELEMENT METHOD; MICROWAVE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; STRESSES; SUBSTRATES; TEMPERATURE;

DIRECT-DIE-ATTACHED MICROCHANNEL COOLERS; OXYGEN-FREE-HIGH-CONDUCTIVITY COPPER; THERMAL MANAGEMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 29244450854     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2005.848584     Document Type: Article

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