SCOPUS 정보 검색 플랫폼

Volumn 46, Issue 4, 2002, Pages 513-523

Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

(13) Johnson, J W a Han, J b Baca, A G c Briggs, R D c Shul, R J c Wendt, J R c Monier, C c Ren, F a Luo, B a Chu, S N G d Tsvetkov, D e Dmitriev, V e Pearton, S J f

a University of Florida (United States)

b Yale University (United States)

c SANDIA NATIONAL LABORATORIES (United States)

d AGERE SYSTEMS (United States)

e TDI Inc (United States)

f UNIVERSITY OF FLORIDA (United States)

Author keywords

AFM; AlGaN; AlN; GaN; HEMT; Mobility; SiC; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; GATES (TRANSISTOR); PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL PHONON SCATTERING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18244364172 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00284-2 Document Type: Article

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.