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MRS Internet Journal of Nitride Semiconductor Research

Volumn 9, Issue , 2004, Pages

The ambient temperature effect on current-voltage characteristics of surface-passivated GaN-based field-effect transistors

(5) Liu, W L a Turin, V O a Balandin, A A a Chen, Y L b Wang, K L b

a University of California Riverside (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; OPTIMIZATION; PASSIVATION; THERMAL EFFECTS;

FLICKER NOISE; HIGH-FREQUENCY APPLICATIONS; HIGH-POWER APPLICATIONS; SELF-HEATING;

FIELD EFFECT TRANSISTORS;

EID: 10344267599 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300000429 Document Type: Article

Times cited : (4)

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