An investigation and comparison of 45-degree spread thermal modeland other techniques to extract junction temperature of HBT and phemt for reliability life test

2005 ROCS Workshop - Reliability of Compound Semiconductors, Proceedings

Volumn 2005, Issue , 2005, Pages 81-93

  Chen, S C ^a   Hsiao, B L ^a   Chou, Frank ^a   Yu, Karl ^a   Chou, H C ^a   Wu, C S ^a  

^a WIN SEMICONDUCTORS CORP   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; INFRARED RADIATION; LIQUID CRYSTALS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE MEASUREMENT;

ARRHENIUS PLOTS; INFRARED MICROSCOPY; JUNCTION TEMPERATURE; THERMOGRAPHY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33846308517     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. JEDEC Publication No. 110, Guidelines for the measurement of thermal resistance of thermal resistance of GaAs FETs.
2. Reliability of Gallium Arsenide MMICs, Aris Christou, John Wiley & Sons, 1992
3. M. Pesare, A. Giorgio, A. G. Perri, "Analytical modelling of multilayer structure electronic devices for electrothermal layout optimization," International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 14, p.395-409, 2001.
4. P. J. van der wel, J.A. Bielen, T. Henderson, J. Middleton, "State of the art thermal analysis of GaAs/InGaP HBT," IEEE CSIC Digest, 2004, pp.79-82.
5. Cooke, H.F., "Precise technique finds FET thermal resistance," Microwaves&RF, Vol. 25, No.8, Aug. 1986, pp.85-87.