Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Ruden, P P ^a   Albrecht, J D ^a   Sutandi, A ^a   Binari, S C ^b   Ikossi Anastasiou, K ^b   Ancona, M G ^b   Henry, R L ^b   Koleske, D D ^b   Wickenden, A E ^b  

^a University of Minnesota   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; GALLIUM NITRIDE; HETEROJUNCTIONS; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; PIEZOELECTRIC DEVICES; POLARIZATION; SUPERLATTICES;

BARRIER WIDTHS; PIEZOELECTRIC POLARIZATIONS; QUANTUM-CONFINED STARK EFFECTS; SPATIALLY INDIRECT EXCITONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0008650253     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003240     Document Type: Conference Paper

References (9)

1. N.X. Nguyen, C. Nguyen, and D.E. Grider, Electronics Lett., 34, 811 (1998).
2. G.J. Sullivan, J.A. Higgins, M.Y. Chen, J.W. Yang, Q. Chen, R.L. Pierson, and B.T. McDermott, Electronics Lett., 34, 922 (1998).
3. S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, and T.J. Jenkins, Abstracts of 1998 Device Research Conference, Charlottesville, VA (1998).
4. P.P.Ruden, IEEE Trans. Electron Devices, 37, 2267 (1990).
5. J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J. Appl. Phys., 83, 4777 (1998).
6. M. Shur, Physics of Semiconductor Devices, Prentice-Hall, Inc., Englewood Cliffs, NJ (1990).
7. T. Ando, A.B. Fowler, F. Stern, Rev. Mod. Phys., 54, 437 (1982).
8. P.P. Ruden, M. Shur, A.I. Akinwande, J.C. Nohava, D.E. Grider, and J. Baek, IEEE Trans. Electron Devices, 37, 2171 (1990).
9. K. Ikossi-Anastasiou, A. Ezis, and A.K. Rai, IEEE Trans. Electron Devices, 35, 1786 (1988).