메뉴 건너뛰기




Volumn , Issue , 2006, Pages

SiGe BiCMOS for analog, high-speed digital and millimetre-wave applications beyond 50 GHz

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL SIGNAL PROCESSING; MILLIMETER WAVE DEVICES; OPERATIONAL AMPLIFIERS; SILICON COMPOUNDS; TRANSCEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 39049088429     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2006.311161     Document Type: Conference Paper
Times cited : (8)

References (41)
  • 1
    • 0029274349 scopus 로고
    • Si/SiGe Epitaxial-Base Transistors -Part II: Process Integration and Analog Applications
    • D.L. Harame et al., "Si/SiGe Epitaxial-Base Transistors -Part II: Process Integration and Analog Applications," IEEE Trans. ED, Vol.42, pp. 459-482, 1995.
    • (1995) IEEE Trans. ED , vol.42 , pp. 459-482
    • Harame, D.L.1
  • 2
    • 0033280585 scopus 로고    scopus 로고
    • A high performance 0.35μm SiGe BiCMOS technology for wireless applications
    • Sept
    • A. Monroy, et al., "A high performance 0.35μm SiGe BiCMOS technology for wireless applications," Proc. IEEE BCTM, pp. 121-124, Sept. 1999.
    • (1999) Proc. IEEE BCTM , pp. 121-124
    • Monroy, A.1
  • 3
    • 0035164139 scopus 로고    scopus 로고
    • High performance 0.25μm SiGe and SiGe:C HBTs using non-selective epitaxy
    • Sept
    • H. Baudry et al., "High performance 0.25μm SiGe and SiGe:C HBTs using non-selective epitaxy,"Proc. IEEE BCTM, pp.52-55, Sept. 2001.
    • (2001) Proc. IEEE BCTM , pp. 52-55
    • Baudry, H.1
  • 4
    • 18144453144 scopus 로고    scopus 로고
    • Ultra High Speed SiGe NPN for advanced BiCMOS technology
    • Dec
    • M. Racanelli, et al., "Ultra High Speed SiGe NPN for advanced BiCMOS technology," IEEE IEDM Techn. Digest, pp. 336-339, Dec. 2001.;
    • (2001) IEEE IEDM Techn. Digest , pp. 336-339
    • Racanelli, M.1
  • 5
    • 23944525655 scopus 로고    scopus 로고
    • Side BiCMOS Technology for RF Circuit Applications
    • M. Racanell and P. Kempf, "Side BiCMOS Technology for RF Circuit Applications," IEEE Trans. ED, Vol.52, pp. 1259-1270, 2005.
    • (2005) IEEE Trans. ED , vol.52 , pp. 1259-1270
    • Racanell, M.1    Kempf, P.2
  • 6
    • 0036575795 scopus 로고    scopus 로고
    • T in a manufacturable technology
    • March
    • T in a manufacturable technology," IEEE Electron Device Lett., Vol.23, No.5, pp.258-260, March. 2002.
    • (2002) IEEE Electron Device Lett , vol.23 , Issue.5 , pp. 258-260
    • Jaganathan, B.1
  • 7
    • 1042277548 scopus 로고    scopus 로고
    • MAX 0.13 μm SiGe:C BiCMOS technology
    • Sept
    • MAX 0.13 μm SiGe:C BiCMOS technology," Proc. IEEE BCTM, pp. 199-202, Sept. 2003.
    • (2003) Proc. IEEE BCTM , pp. 199-202
    • Laurens, M.1
  • 8
    • 1042289143 scopus 로고    scopus 로고
    • Side Bipolar Technology with 3.9ps gate delay
    • Sept
    • T.F. Meister et al., "Side Bipolar Technology with 3.9ps gate delay, "IEEE BCTM, pp.103-106, Sept. 2003.
    • (2003) IEEE BCTM , pp. 103-106
    • Meister, T.F.1
  • 9
    • 27944497859 scopus 로고    scopus 로고
    • MAX self-aligned SiGeC HBT optimized towards CMOS compatibility
    • Oct
    • MAX self-aligned SiGeC HBT optimized towards CMOS compatibility," Proc. IEEE BCTM, pp. 120-123, Oct. 2005.
    • (2005) Proc. IEEE BCTM , pp. 120-123
    • Chevalier, P.1
  • 10
    • 33847068832 scopus 로고    scopus 로고
    • RF CMOS for Microwave and MM-wave Applications
    • Jan
    • B. Jagannathan, et al, "RF CMOS for Microwave and MM-wave Applications," IEEE SiRF, Techn. Digest. pp.259-264, Jan. 2006.
    • (2006) IEEE SiRF, Techn. Digest , pp. 259-264
    • Jagannathan, B.1
  • 11
    • 29144438908 scopus 로고    scopus 로고
    • MAX = 340 GHz, Appl.Phys.Lett., 87, pp.252109-1/3, Dec. 2005
    • MAX = 340 GHz," Appl.Phys.Lett., Vol.87, pp.252109-1/3, Dec. 2005
  • 12
    • 39049159416 scopus 로고    scopus 로고
    • P. Chevalier et al., Advanced SiGe BiCMOS and CMOS Platforms for Optical and mm-wave ICs, IEEE CSICS, San Antonio, Nov. 2006. D. Grindberg, Silicon Heterostructure Handbook, pp.4.5-439-457 Taylor & Francis, 2006.
    • P. Chevalier et al., "Advanced SiGe BiCMOS and CMOS Platforms for Optical and mm-wave ICs," IEEE CSICS, San Antonio, Nov. 2006. D. Grindberg, "Silicon Heterostructure Handbook," pp.4.5-439-457 Taylor & Francis, 2006.
  • 13
    • 33845870995 scopus 로고    scopus 로고
    • 60-GHz PA and LNA in 90-nm RF-CMOS
    • June
    • T. Yao, et al., "60-GHz PA and LNA in 90-nm RF-CMOS," IEEE RFIC Symposium Digest, pp. 147-150, June 2006.
    • (2006) IEEE RFIC Symposium Digest , pp. 147-150
    • Yao, T.1
  • 14
    • 34247368425 scopus 로고    scopus 로고
    • A 1.2 V, 60GHz radio receiver with on-chip transformers and inductors in 90nm CMOS
    • San Antonio, Nov
    • D. Alldred et al. "A 1.2 V, 60GHz radio receiver with on-chip transformers and inductors in 90nm CMOS," IEEE CSICS, San Antonio, Nov. 2006.
    • (2006) IEEE CSICS
    • Alldred, D.1
  • 15
    • 39049089757 scopus 로고    scopus 로고
    • Application of SiGe HBTs to Datacom and Wireless
    • April
    • R. Hadaway, et al., "Application of SiGe HBTs to Datacom and Wireless," MRS, April, 1998.
    • (1998) MRS
    • Hadaway, R.1
  • 16
    • 0034823028 scopus 로고    scopus 로고
    • Circuits and Technologies for Highly Integrated Optical Networking ICs at 10Gb/s to 40Gb/s
    • May
    • S.P. Voinigescu et al., "Circuits and Technologies for Highly Integrated Optical Networking ICs at 10Gb/s to 40Gb/s," Proc. IEEE CICC, pp.331-338, May 2001.
    • (2001) Proc. IEEE CICC , pp. 331-338
    • Voinigescu, S.P.1
  • 18
    • 39049163152 scopus 로고    scopus 로고
    • An Integrated VCSEL Driver for 10 Gb/s Ethernet in 0.13μm CMOS
    • Feb
    • S. Rabii, et al., "An Integrated VCSEL Driver for 10 Gb/s Ethernet in 0.13μm CMOS," IEEE ISSCC Digest, pp.246-247, Feb. 2006.
    • (2006) IEEE ISSCC Digest , pp. 246-247
    • Rabii, S.1
  • 19
    • 0036105959 scopus 로고    scopus 로고
    • OC-192 Receiver in Standard 0.18μm CMOS
    • Feb
    • J. Cao et al, "OC-192 Receiver in Standard 0.18μm CMOS," ISSCC Digest, pp.250-251, Feb. 2002.
    • (2002) ISSCC Digest , pp. 250-251
    • Cao, J.1
  • 20
    • 39549095731 scopus 로고    scopus 로고
    • A 40Gb/s Decision Circuit in 90-nm CMOS
    • Montreux, Sept
    • T. Chalvatzis, et al., "A 40Gb/s Decision Circuit in 90-nm CMOS," ESSCIRC, Montreux, Sept. 2006.
    • (2006) ESSCIRC
    • Chalvatzis, T.1
  • 21
    • 33847125185 scopus 로고    scopus 로고
    • A 60Gb/s 2:1 Selector in 90nm CMOS
    • Oct
    • D. Kehrer et al., "A 60Gb/s 2:1 Selector in 90nm CMOS," IEEE CSICS Digest, pp.105-108, Oct. 2004.
    • (2004) IEEE CSICS Digest , pp. 105-108
    • Kehrer, D.1
  • 22
    • 0043282888 scopus 로고    scopus 로고
    • STS-768 Multiplexer With Full-Rate Output Data Retimer in InP HBT
    • Sept
    • A. Hendarman, et al., "STS-768 Multiplexer With Full-Rate Output Data Retimer in InP HBT," IEEE J.Solid-State Circuits, Vol.38, pp. 1497-1503, Sept. 2003.
    • (2003) IEEE J.Solid-State Circuits , vol.38 , pp. 1497-1503
    • Hendarman, A.1
  • 23
    • 2442646311 scopus 로고    scopus 로고
    • A 108Gb/s 4:1 Multiplexer in 0.13 μm SiGe-Bipolar Technology
    • Feb
    • M. Meghelli, "A 108Gb/s 4:1 Multiplexer in 0.13 μm SiGe-Bipolar Technology," ISSCC Digest, pp.236-237, Feb. 2004.
    • (2004) ISSCC Digest , pp. 236-237
    • Meghelli, M.1
  • 24
    • 18744416335 scopus 로고    scopus 로고
    • A 2.5-V, 45-Gb/s Decision Circuit Using SiGe BiCMOS Logic
    • T.O. Dickson, et al., "A 2.5-V, 45-Gb/s Decision Circuit Using SiGe BiCMOS Logic," IEEE J. Solid-State Circuits, Vol.40, No.4, pp.994-1003, 2005.
    • (2005) IEEE J. Solid-State Circuits , vol.40 , Issue.4 , pp. 994-1003
    • Dickson, T.O.1
  • 25
    • 39749126717 scopus 로고    scopus 로고
    • Low-power circuits for a 10.7-to-86 Gb/s 80-Gb/s serial transmitter in 130-nm SiGe BiCMOS
    • Nov
    • T.O. Dickson and S. P. Voinigescu., "Low-power circuits for a 10.7-to-86 Gb/s 80-Gb/s serial transmitter in 130-nm SiGe BiCMOS," IEEE CSICS, Nov. 2006.
    • (2006) IEEE CSICS
    • Dickson, T.O.1    Voinigescu, S.P.2
  • 27
    • 30944458855 scopus 로고    scopus 로고
    • Design Methodology and Applications of Side BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth
    • Nov
    • S.P. Voinigescu, et al., "Design Methodology and Applications of Side BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth," IEEE CSICS, Techn. Digest, pp.283-286, Nov. 2005.
    • (2005) IEEE CSICS, Techn. Digest , pp. 283-286
    • Voinigescu, S.P.1
  • 28
    • 33746897665 scopus 로고    scopus 로고
    • 1 GHz Opamp-Based Bandpass Filter
    • Jan
    • G. Ng, et al., "1 GHz Opamp-Based Bandpass Filter," IEEE SiRF, Techn. Digest. pp.369-372, Jan. 2006.
    • (2006) IEEE SiRF, Techn. Digest , pp. 369-372
    • Ng, G.1
  • 29
    • 33746927173 scopus 로고    scopus 로고
    • T.O. Dickson et al., The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks, IEEE J. S-St. Circuits, Aug. 2006.
    • T.O. Dickson et al., "The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks," IEEE J. S-St. Circuits, Aug. 2006.
  • 30
    • 21644443524 scopus 로고    scopus 로고
    • 49-Gb/s, 7-Tap Transversal Filter in 0.18μm SiGe BiCMOS for Backplane Equalization
    • Oct
    • A. Hazneci and S. P. Voinigescu, "49-Gb/s, 7-Tap Transversal Filter in 0.18μm SiGe BiCMOS for Backplane Equalization," IEEE CSICS, pp. 101-104, Oct.2004.
    • (2004) IEEE CSICS , pp. 101-104
    • Hazneci, A.1    Voinigescu, S.P.2
  • 31
    • 30944450843 scopus 로고    scopus 로고
    • A 1-Tap 40-Gbs Lookahead Decision Feedback Equalizer in 0.18μm SiGe BiCMOS Technology
    • Nov
    • A. Garg, et al., "A 1-Tap 40-Gbs Lookahead Decision Feedback Equalizer in 0.18μm SiGe BiCMOS Technology," IEEE CSICS, pp.37-41, Nov.2005.
    • (2005) IEEE CSICS , pp. 37-41
    • Garg, A.1
  • 32
    • 30944451800 scopus 로고    scopus 로고
    • A 40-GSamples/Sec Track & Hold Amplifier in 0.18μm SiGe BiCMOS Technology
    • Nov
    • S. Shahramian, et al., "A 40-GSamples/Sec Track & Hold Amplifier in 0.18μm SiGe BiCMOS Technology," IEEE CSICS, pp. 101-104, Nov. 2005.
    • (2005) IEEE CSICS , pp. 101-104
    • Shahramian, S.1
  • 33
    • 33845895031 scopus 로고    scopus 로고
    • A Low-Noise 40-GS/s Continuous-Time Bandpass AS ADC Centered at 2GFIz
    • June
    • T. Chalvatzis and S. P. Voinigescu, "A Low-Noise 40-GS/s Continuous-Time Bandpass AS ADC Centered at 2GFIz," IEEE RFIC Symposium Digest, pp. 323-326, June 2006.
    • (2006) IEEE RFIC Symposium Digest , pp. 323-326
    • Chalvatzis, T.1    Voinigescu, S.P.2
  • 34
    • 33845868394 scopus 로고    scopus 로고
    • 65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers
    • Jan
    • M. Gordon, et al.,"65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers" IEEE SiRF Techn. Digest. pp.265-268, Jan. 2006.
    • (2006) IEEE SiRF Techn. Digest , pp. 265-268
    • Gordon, M.1
  • 35
    • 34247378588 scopus 로고    scopus 로고
    • 65GHz Doppler Radar Transceiver with On-Chip Antenna in 0.18μm SiGe BiCMOS
    • June
    • T. Yao, et al., "65GHz Doppler Radar Transceiver with On-Chip Antenna in 0.18μm SiGe BiCMOS," IEEE MS Digest, pp.1493-1496, June 2006.
    • (2006) IEEE MS Digest , pp. 1493-1496
    • Yao, T.1
  • 36
    • 12344258200 scopus 로고    scopus 로고
    • SiGe BiCMOS 65-GHz BPSK Transmitter and 30 to 122 GHz LC-Varactor VCOs with up to 21% Tuning Range, IEEE CSICS
    • Oct
    • C. Lee, et al., "SiGe BiCMOS 65-GHz BPSK Transmitter and 30 to 122 GHz LC-Varactor VCOs with up to 21% Tuning Range," IEEE CSICS, Technical Digest, pp. 179-182, Oct. 2004.
    • (2004) Technical Digest , pp. 179-182
    • Lee, C.1
  • 37
    • 0031236647 scopus 로고    scopus 로고
    • A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
    • Sept
    • S.P. Voinigescu et al, "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid-State Circuits, vol. 32, pp. 1430-1438, Sept. 1997.
    • (1997) IEEE J. Solid-State Circuits , vol.32 , pp. 1430-1438
    • Voinigescu, S.P.1
  • 38
    • 34748879199 scopus 로고    scopus 로고
    • Design and Scaling of SiGe BiCMOS VCOs Operating near 100 GHz
    • S.T. Nicolson, et al, "Design and Scaling of SiGe BiCMOS VCOs Operating near 100 GHz," IEEE BCTM 2006.
    • IEEE BCTM 2006
    • Nicolson, S.T.1
  • 39
    • 34248181855 scopus 로고    scopus 로고
    • Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz
    • E. Laskin et al. "Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz," IEEE BCTM 2006.
    • IEEE BCTM 2006
    • Laskin, E.1
  • 40
    • 33847028792 scopus 로고    scopus 로고
    • SiGe BiCMOS Topologies for Low-Voltage Mm-Wave Voltage-Controlled Oscillators and Frequency Dividers
    • Jan
    • T.O Dickson, S.P. Voinigescu, "SiGe BiCMOS Topologies for Low-Voltage Mm-Wave Voltage-Controlled Oscillators and Frequency Dividers," IEEE SiRF, Techn. Digest, pp.273-276, Jan. 2006.
    • (2006) IEEE SiRF, Techn. Digest , pp. 273-276
    • Dickson, T.O.1    Voinigescu, S.P.2
  • 41
    • 33847069231 scopus 로고    scopus 로고
    • Modeling and Extraction of SiGe HBT Noise Parameters from Measured Y-Parameters and Accounting for Noise
    • Jan
    • K.H.K. Yau and S.P. Voinigescu, "Modeling and Extraction of SiGe HBT Noise Parameters from Measured Y-Parameters and Accounting for Noise Correlation, "IEEE SiRF Digest. pp.226-229, Jan. 2006.
    • (2006) Correlation, IEEE SiRF Digest , pp. 226-229
    • Yau, K.H.K.1    Voinigescu, S.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.