-
1
-
-
0024913104
-
"SiGe-base, poly-emitter heterojunction bipolar transistors"
-
G. L. Patton, D. L. Harame, J. M. C. Stork, B. S. Meyerson, G. J. Scilla, and E. Ganin, "SiGe-base, poly-emitter heterojunction bipolar transistors," in Proc. Symp. VLSI Technology, 1989, pp. 35-36.
-
(1989)
Proc. Symp. VLSI Technology
, pp. 35-36
-
-
Patton, G.L.1
Harame, D.L.2
Stork, J.M.C.3
Meyerson, B.S.4
Scilla, G.J.5
Ganin, E.6
-
2
-
-
33645427567
-
-
RF and AMS Technologies for Wireless Communications. International Technology Roadmap for Semiconductors, International SEMATECH, Austin, TX. [Online]. Available
-
(2003) RF and AMS Technologies for Wireless Communications. International Technology Roadmap for Semiconductors, International SEMATECH, Austin, TX. [Online]. Available: http://public.itrs.net/Files/ 2003ITRS/Home2003.htm
-
(2003)
-
-
-
3
-
-
18144453144
-
"Ultra high speed SiGe NPN for advanced BiCMOS technology"
-
Dec.
-
M. Racanelli, K. Schuegraf, A. Kalburge, A. Kar-Roy, B. Shen, C. Hu, D. Chapek, D. Howard, D. Quon, F. Wang, G. U'ren, L. Lao, H. Tu, J. Zheng, J. Zhang, K. Bell, K. Yin, P. Joshi, S. Akhtar, S. Vo, T. Lee, W. Shi, and R. Kempf, "Ultra high speed SiGe NPN for advanced BiCMOS technology," in IEDM Tech. Dig., Dec. 2001, pp. 336-339.
-
(2001)
IEDM Tech. Dig.
, pp. 336-339
-
-
Racanelli, M.1
Schuegraf, K.2
Kalburge, A.3
Kar-Roy, A.4
Shen, B.5
Hu, C.6
Chapek, D.7
Howard, D.8
Quon, D.9
Wang, F.10
U'Ren, G.11
Lao, L.12
Tu, H.13
Zheng, J.14
Zhang, J.15
Bell, K.16
Yin, K.17
Joshi, P.18
Akhtar, S.19
Vo, S.20
Lee, T.21
Shi, W.22
Kempf, R.23
more..
-
4
-
-
0242527285
-
"SiGe BiCMOS technology for communication products"
-
Sep.
-
M. Racanelli and P. Kempf, "SiGe BiCMOS technology for communication products," in CICC Proc., Sep. 2003, pp. 331-334.
-
(2003)
CICC Proc.
, pp. 331-334
-
-
Racanelli, M.1
Kempf, P.2
-
5
-
-
0347566272
-
"SiGe BiCMOS technology for highly integrated wireless transceivers"
-
Nov.
-
M. Racanelli, P. Ma, and P. Kempf, "SiGe BiCMOS technology for highly integrated wireless transceivers," in GaAs IC Dig., Nov. 2003, pp. 183-186.
-
(2003)
GaAs IC Dig.
, pp. 183-186
-
-
Racanelli, M.1
Ma, P.2
Kempf, P.3
-
6
-
-
4444341171
-
MAX of 300 GHz"
-
Jun.
-
MAX of 300 GHz," in Proc. RF IC Symp., Jun. 2004, pp. 395-398.
-
(2004)
Proc. RF IC Symp.
, pp. 395-398
-
-
Rieh, J.-S.1
Greenberg, D.2
Khater, M.3
Schonenbert, K.T.4
Jeng, S.-J.5
Pagette, F.6
Adam, T.7
Chinthakindi, A.8
Florkey, J.9
Jagannathan, B.10
Johnson, J.11
Krishnasamy, R.12
Sanderson, D.13
Schnabel, C.14
Smith, P.15
Stricker, A.16
Sweeney, S.17
Vaed, K.18
Yanagisawa, T.19
Ahlgren, D.20
Stein, K.21
Freeman, G.22
more..
-
7
-
-
0842331404
-
"SiGe: C BiCMOS technology with 3.6 ps gate delay"
-
Dec.
-
H. Rucker, B. Heinemann, R. Barth, D. Bolze, J. Drews, U. Haak, W. Hoppner, D. Knoll, K. Kopke, S. Marschmeyer, H. H. Richter, P. Schley, D. Schmidt, R. Scholz, B. Tillack, W. Winkler, H. E. Wulf, and Y. Yamamoto, "SiGe:C BiCMOS technology with 3.6 ps gate delay," in IEDM Tech. Dig., Dec. 2003, pp. 121-124.
-
(2003)
IEDM Tech. Dig.
, pp. 121-124
-
-
Rucker, H.1
Heinemann, B.2
Barth, R.3
Bolze, D.4
Drews, J.5
Haak, U.6
Hoppner, W.7
Knoll, D.8
Kopke, K.9
Marschmeyer, S.10
Richter, H.H.11
Schley, P.12
Schmidt, D.13
Scholz, R.14
Tillack, B.15
Winkler, W.16
Wulf, H.E.17
Yamamoto, Y.18
-
8
-
-
0032597791
-
"Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules"
-
W. Winkler, J. Borngraber, H. Erzgraber, H. Erzgraber, B. Heinemann, D. Knoll, H. J. Osten, M. Pierschel, K. Pressel, and P. Schley, "Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules," Proc. CICC, pp. 351-358, 1998.
-
(1998)
Proc. CICC
, pp. 351-358
-
-
Winkler, W.1
Borngraber, J.2
Erzgraber, H.3
Erzgraber, H.4
Heinemann, B.5
Knoll, D.6
Osten, H.J.7
Pierschel, M.8
Pressel, K.9
Schley, P.10
-
9
-
-
0842331408
-
"Directions to improve SiGe BiCMOS technology featuring 200 GHz SiGe HBT and 80 nm gate CMOS"
-
Dec.
-
T. Hashimoto, Y. Nonaka, T. Tominari, H. Fujiwara, K. Tokunaga, M. Arai, S. Wada, T. Udo, M. Seto, M. Miura, H. Shimamoto, K. Washio, and H. Tomioka, "Directions to improve SiGe BiCMOS technology featuring 200 GHz SiGe HBT and 80 nm gate CMOS," in IEDM Tech. Dig., Dec. 2003.
-
(2003)
IEDM Tech. Dig.
-
-
Hashimoto, T.1
Nonaka, Y.2
Tominari, T.3
Fujiwara, H.4
Tokunaga, K.5
Arai, M.6
Wada, S.7
Udo, T.8
Seto, M.9
Miura, M.10
Shimamoto, H.11
Washio, K.12
Tomioka, H.13
-
10
-
-
23944447886
-
MAX SiGe HBT"
-
Sep.
-
MAX SiGe HBT," in Proc. BCTM, Sep. 2003.
-
(2003)
Proc. BCTM
-
-
Orner, B.A.1
Liu, Q.Z.2
Rainey, B.3
Stricker, A.4
Geiss, P.5
Gray, P.6
Zierak, M.7
Gordon, M.8
Collins, D.9
Ramachandran, V.10
Hodge, W.11
Willets, C.12
Joseph, A.13
Dunn, J.14
Rieh, J.-S.15
Jeng, S.-J.16
Eld, E.17
Freeman, G.18
Ahlgren, D.19
-
11
-
-
0036441303
-
"High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications"
-
Sep.
-
N. Feilchenfeld, L. Lanzerotti, D. Sheridan, R. Wuthrich, P. Geiss, D. Coolbaugh, P. Gray, J. He, P. Demang, J. Greco, T. Larsen, B. Patel, M. Zierak, W. Hodge, J. Rascoe, J. Trappasso, B. Orner, A. Norris, D. Hershberger, B. Voegeli, S. Voldman, R. Rassel, V. Ramachandrian, M. Gautsch, W. Wshun, R. Hussain, D. Jordan, S. S. Onge, and J. Dunn, "High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications," in Proc. BCTM, Sep. 2002, pp. 197-200.
-
(2002)
Proc. BCTM
, pp. 197-200
-
-
Feilchenfeld, N.1
Lanzerotti, L.2
Sheridan, D.3
Wuthrich, R.4
Geiss, P.5
Coolbaugh, D.6
Gray, P.7
He, J.8
Demang, P.9
Greco, J.10
Larsen, T.11
Patel, B.12
Zierak, M.13
Hodge, W.14
Rascoe, J.15
Trappasso, J.16
Orner, B.17
Norris, A.18
Hershberger, D.19
Voegeli, B.20
Voldman, S.21
Rassel, R.22
Ramachandrian, V.23
Gautsch, M.24
Wshun, W.25
Hussain, R.26
Jordan, D.27
Onge, S.S.28
Dunn, J.29
more..
-
12
-
-
0035173259
-
MAX) HBT and ASIC-compatible CMOS using copper interconnect"
-
Sep.
-
MAX) HBT and ASIC-compatible CMOS using copper interconnect," in Proc. BCTM, Sep. 2001, pp. 143-146.
-
(2001)
Proc. BCTM
, pp. 143-146
-
-
Joseph, A.1
Coolbaugh, D.2
Zierak, M.3
Wuthrich, R.4
Geiss, P.5
He, Z.6
Liu, X.7
Orner, B.8
Johnson, J.9
Freeman, G.10
Ahlgren, D.11
Jagannathan, B.12
Lanzerotti, L.13
Ramachandran, V.14
Malinowski, J.15
Chen, H.16
Chu, J.17
Gray, P.18
Johnson, R.19
Dunn, J.20
Subbanna, S.21
Schonenbert, K.22
Harame, D.23
Groves, R.24
Watson, K.25
Jadus, D.26
Meghelli, M.27
Rylyakov, A.28
more..
-
13
-
-
3142755782
-
"SiGe bipolar technology with 3.9 ps gate delay"
-
Sep.
-
T. F. Meister, H. Schafer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, H. Knapp, M. Wurzer, A. Mitchell, T. Bottner, and J. Bock, "SiGe bipolar technology with 3.9 ps gate delay," in Proc. BCTM, Sep. 2003.
-
(2003)
Proc. BCTM
-
-
Meister, T.F.1
Schafer, H.2
Aufinger, K.3
Stengl, R.4
Boguth, S.5
Schreiter, R.6
Rest, M.7
Knapp, H.8
Wurzer, M.9
Mitchell, A.10
Bottner, T.11
Bock, J.12
-
14
-
-
0036931218
-
2 6-T SRAM cell"
-
Dec.
-
2 6-T SRAM cell," in IEDM Tech. Dig., Dec. 2002, pp. 73-76.
-
(2002)
IEDM Tech. Dig.
, pp. 73-76
-
-
Kuhn, K.1
Agostinelli, M.2
Ahmed, S.3
Chanbers, S.4
Cea, S.5
Christensen, S.6
Fischer, P.7
Gong, J.8
Kardas, C.9
Letson, T.10
Henning, L.11
Murthy, A.12
Muthali, H.13
Obradovic, B.14
Packan, P.15
Pae, S.W.16
Post, I.17
Putna, S.18
Raol, K.19
Roskowski, A.20
Soman, R.21
Thomas, T.22
Vandervoom, P.23
Weiss, M.24
Young, I.25
more..
-
15
-
-
0035168264
-
"A 0.18 μm SiGe: C RFBiCMOS technology for wireless and gigabit optical communication applications"
-
Sep.
-
J. Kirchgessner, S. Bigelow, F. K. Chai, R. Cross, P. Dahl, A. Duvallet, B. Gardner, M. Griswold, D. Hammock, J. Heddleson, S. Hildreth, A. Imdayam, C. Lesher, T. Meixner, P. Meng, M. Menner, J. Mcginley, D. Monk, D. Morgan, H. Rueda, C. Small, S. Stewart, M. Ting, I. To, P. Welch, T. Zirkle, and W. M. Huang, "A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications," in Proc. BCTM, Sep. 2001, pp. 151-154.
-
(2001)
Proc. BCTM
, pp. 151-154
-
-
Kirchgessner, J.1
Bigelow, S.2
Chai, F.K.3
Cross, R.4
Dahl, P.5
Duvallet, A.6
Gardner, B.7
Griswold, M.8
Hammock, D.9
Heddleson, J.10
Hildreth, S.11
Imdayam, A.12
Lesher, C.13
Meixner, T.14
Meng, P.15
Menner, M.16
McGinley, J.17
Monk, D.18
Morgan, D.19
Rueda, H.20
Small, C.21
Stewart, S.22
Ting, M.23
To, I.24
Welch, P.25
Zirkle, T.26
Huang, W.M.27
more..
-
16
-
-
23944484760
-
MAX 0.13 μm SiGe: C BiCMOS technology"
-
Sep.
-
MAX 0.13 μm SiGe:C BiCMOS technology," in Proc. BCTM, Sep,. 2003.
-
(2003)
Proc. BCTM
-
-
Laurens, M.1
Martinet, B.2
Kermarrec, O.3
Campidelli, Y.4
Deleglise, F.5
Dutarte, D.6
Troillard, G.7
Gloria, D.8
Bonnouvrier, J.9
Beerkems, R.10
Rousset, B.11
Leverd, F.12
Chantre, A.13
Monroy, A.14
-
17
-
-
0842331406
-
"A Complementary BiCMOS Technology with High Speed NPN and PNP SiGe: C HBTs"
-
B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, O. Fursenko, M. Glante, K. Lowatzki, A. Gregor, U. Haak, W. Hoppner, D. Knoll, R. Kurps, S. Marschmeyer, S. Orlowski, H. Rucker, P. Schley, D. Schraidt, R. Scholz, W. Winkler, and Y. Yamamoto, "A Complementary BiCMOS Technology with High Speed NPN and PNP SiGe:C HBTs," IEDM Tech. Dig., pp. 117-120, 2003.
-
(2003)
IEDM Tech. Dig.
, pp. 117-120
-
-
Heinemann, B.1
Barth, R.2
Bolze, D.3
Drews, J.4
Formanek, P.5
Fursenko, O.6
Glante, M.7
Lowatzki, K.8
Gregor, A.9
Haak, U.10
Hoppner, W.11
Knoll, D.12
Kurps, R.13
Marschmeyer, S.14
Orlowski, S.15
Rucker, H.16
Schley, P.17
Schraidt, D.18
Scholz, R.19
Winkler, W.20
Yamamoto, Y.21
more..
-
18
-
-
0031236647
-
"A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design"
-
Sep.
-
S. P. Voinigescu, M. C. Maliepaard, J. L. Showell, B. E. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D. Harame, "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," J. Solid-State Circuits, vol. 32, no. 9, pp. 1430-1439, Sep. 1997.
-
(1997)
J. Solid-State Circuits
, vol.32
, Issue.9
, pp. 1430-1439
-
-
Voinigescu, S.P.1
Maliepaard, M.C.2
Showell, J.L.3
Babcock, B.E.4
Marchesan, D.5
Schroter, M.6
Schvan, P.7
Harame, D.8
-
19
-
-
36749071221
-
"High density metal insulator metal capacitors using PECVD nitride for mixed signal and RF circuits"
-
A. Kar-Roy, C. Hu, M. Racanelli, C. A. Compton, P. Kempf, G. Jolly, P. N. Sherman, J. Zheng, Z. Zhang, and A. Yin, "High density metal insulator metal capacitors using PECVD nitride for mixed signal and RF circuits," in Proc. IEEE Int. Conf. Interconnect Technology, 1999, pp. 245-247.
-
(1999)
Proc. IEEE Int. Conf. Interconnect Technology
, pp. 245-247
-
-
Kar-Roy, A.1
Hu, C.2
Racanelli, M.3
Compton, C.A.4
Kempf, P.5
Jolly, G.6
Sherman, P.N.7
Zheng, J.8
Zhang, Z.9
Yin, A.10
-
20
-
-
0036437792
-
MAX = 70/100 GHz 0.25 μm low power SiGe BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz"
-
Sep.
-
MAX = 70/100 GHz 0.25 μm low power SiGe BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz," in Proc. BCTM, Sep. 2002, pp. 201-204.
-
(2002)
Proc. BCTM
, pp. 201-204
-
-
Deixler, P.1
Colclaser, R.2
Bower, D.3
Bell, N.4
Boer, W.5
Szmyd, D.6
Bardy, S.7
Wilbanks, W.8
Barre, P.9
Houdt, M.V.10
Paasschens, J.C.J.11
Veenstra, H.12
Heijden, E.V.D.13
Donkers, J.J.T.M.14
Slotboom, J.W.15
-
21
-
-
33645428801
-
-
to be published
-
D. Domisch, G. Wilk, G. Li, K. M. Ring, F. F. Wang, and D. J. Howard, to be published.
-
-
-
Domisch, D.1
Wilk, G.2
Li, G.3
Ring, K.M.4
Wang, F.F.5
Howard, D.J.6
-
22
-
-
0041589196
-
"A 1.4 mA & 3 mW, SiGe90, BiFET low noise amplifier for wireless portable applications"
-
P. Ma, M. Racanelli, J. Zheng, and M. Knight, "A 1.4 mA & 3 mW, SiGe90, BiFET low noise amplifier for wireless portable applications," in RFIC Symp. Dig., 2003, pp. 237-240.
-
(2003)
RFIC Symp. Dig.
, pp. 237-240
-
-
Ma, P.1
Racanelli, M.2
Zheng, J.3
Knight, M.4
-
23
-
-
0036309482
-
"High performance circuits in 0.18 μm SiGe BiCMOS process for wireless applications"
-
P. Ye, B. Agarwal, M. Reddy, L. Li, J. Cheng, P. C. Mudge, E. McCarthy, and S. Lloyd, "High performance circuits in 0.18 μm SiGe BiCMOS process for wireless applications," in RFIC Symp. Dig.., 2002, pp. 329-332.
-
(2002)
RFIC Symp. Dig.
, pp. 329-332
-
-
Ye, P.1
Agarwal, B.2
Reddy, M.3
Li, L.4
Cheng, J.5
Mudge, P.C.6
McCarthy, E.7
Lloyd, S.8
-
24
-
-
4444254153
-
"Modified derivative superposition method for linearizing FET low noise amplifiers"
-
V. Aparin and L. Larson, "Modified derivative superposition method for linearizing FET low noise amplifiers," in RFIC Symp. Dig., 2004, pp. 105-108.
-
(2004)
RFIC Symp. Dig.
, pp. 105-108
-
-
Aparin, V.1
Larson, L.2
-
25
-
-
33645428387
-
"A comparison of bipolar technologies for linear handset power amplifier applications"
-
K. Nellis and P. Zampardi, "A comparison of bipolar technologies for linear handset power amplifier applications," in Proc. BCTM, 2003.
-
(2003)
Proc. BCTM
-
-
Nellis, K.1
Zampardi, P.2
-
27
-
-
12344258200
-
"SiGe BiCMOS 65 GHz BPSK transmitter and 30 to 122 GHzLC-varactor VCO's with up to 21% tuning range"
-
Oct.
-
C. Lee, T. Yao, A. Mangan, K. Yau, M. A. Copeland, and S. P. Voinigescu, "SiGe BiCMOS 65 GHz BPSK transmitter and 30 to 122 GHzLC-varactor VCO's with up to 21% tuning range," in CSICS Tech. Dig., Oct. 2004, pp. 179-182.
-
(2004)
CSICS Tech. Dig.
, pp. 179-182
-
-
Lee, C.1
Yao, T.2
Mangan, A.3
Yau, K.4
Copeland, M.A.5
Voinigescu, S.P.6
-
28
-
-
21644443524
-
"A 49-Gb/s, 7-Tap transversal filter in 0.18 μm SiGe BiCMOS for backplane equalization"
-
Oct.
-
A. Hazneci and S. P. Voinigescu, "A 49-Gb/s, 7-Tap transversal filter in 0.18 μm SiGe BiCMOS for backplane equalization," in CSICS Tech. Dig., Oct. 2004, pp. 101-104.
-
(2004)
CSICS Tech. Dig.
, pp. 101-104
-
-
Hazneci, A.1
Voinigescu, S.P.2
|