BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1999, Pages 121-124

  Monroy, A ^a   Laurens, M ^a   Marty, M ^a   Dutartre, D ^a   Gloria, D ^a   Carbonero, J L ^a   Perrotin, A ^a   Roche, M ^a   Chantre, A ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; WIRELESS TELECOMMUNICATION SYSTEMS;

GUMMEL PLOTS; SILICON GERMANIUM BICMOS TECHNOLOGY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033280585     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)