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Volumn , Issue , 2005, Pages 283-286

Design methodology and applications of SiGe BiCMOS cascode opamps with up to 37-GHz unity gain bandwidth

Author keywords

Bandpass filter; Cascade; Common mode feedback; Operational amplifier; Peak f max current density; SiGe BiCMOS; Unity gain bandwidth

Indexed keywords

BANDPASS FILTERS; FEEDBACK; OPERATIONAL AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS;

EID: 30944458855     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531841     Document Type: Conference Paper
Times cited : (14)

References (7)
  • 1
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    • MAX 0.13 μm SiGe:C BiCMOS technology
    • Sept.
    • MAX 0.13 μm SiGe:C BiCMOS technology," Proc. IEEE BCTM, Sept. 2003.
    • (2003) Proc. IEEE BCTM
    • Laurens, M.1
  • 2
    • 18744416335 scopus 로고    scopus 로고
    • A 2.5-V, 45-Gb/s decision circuit using SiGe BiCMOS logic
    • April
    • T.O. Dickson et al., "A 2.5-V, 45-Gb/s Decision Circuit Using SiGe BiCMOS Logic," IEEE J. Solid-State Circuits, Vol. 40, pp. 994-1003, April. 2005.
    • (2005) IEEE J. Solid-state Circuits , vol.40 , pp. 994-1003
    • Dickson, T.O.1
  • 3
    • 12344308463 scopus 로고    scopus 로고
    • Si-based inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits
    • Jan.
    • T.O. Dickson, et al., "Si-based inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits," IEEE Trans. MTT, Vol. 53, pp. 123-133, Jan. 2005.
    • (2005) IEEE Trans. MTT , vol.53 , pp. 123-133
    • Dickson, T.O.1
  • 5
    • 12344255271 scopus 로고    scopus 로고
    • A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs
    • Sept.
    • S.P. Voinigescu, et al., "A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs," SiRF-2004, pp. 111-114, Sept. 2004.
    • (2004) SiRF-2004 , pp. 111-114
    • Voinigescu, S.P.1
  • 6
    • 30944451977 scopus 로고    scopus 로고
    • Scaling of characteristic current densities in deep-submicron MOSFETs and its impact on RF, mm-wave, and high-speed digital circuit design
    • submitted to April
    • S.P. Voinigescu, et al., "Scaling of Characteristic Current Densities in Deep-Submicron MOSFETs and its Impact on RF, mm-wave, and High-Speed Digital Circuit Design," submitted to IEEE J. Solid-State Circuits in April 2005.
    • (2005) IEEE J. Solid-state Circuits
    • Voinigescu, S.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.