Low-power circuits for a 2.5-V, 10.7-to-86-Gb/s serial transmitter in 130-nm SiGe BiCMOS

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 235-238

  Dickson, Timothy O ^a   Voinigescu, Sorin P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

High speed digital logic; Inductive peaking; Low power; Multiplexer; SiGe BiCMOS; VCO

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; NETWORKS (CIRCUITS); SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; TRANSMITTERS;

BUILDING BLOCKS; COMPOUND SEMICONDUCTOR (CS); LOW POWERS; LOW-POWER CIRCUITS; SIGE BICMOS; SIGE BICMOS TECHNOLOGY;

BICMOS TECHNOLOGY;

EID: 39749126717     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319943     Document Type: Conference Paper

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