Modeling and extraction of SiGe HBT noise parameters from measured Y-parameters and accounting for noise correlation

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Volumn 2006, Issue , 2006, Pages 226-229

  Yau, Kenneth H K ^a   Voinigescu, Sorin P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

Millimetre wave; Noise correlation; Noise modeling; SiGe HBTs

Indexed keywords

COMPUTER SIMULATION; CORRELATION METHODS; MILLIMETER WAVE DEVICES; SPURIOUS SIGNAL NOISE;

NOISE CORRELATION; NOISE MODELING; NOISE TRANSIT TIME; SIGE HBT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847069231     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2005.1587951     Document Type: Conference Paper

References (13)

1. C. Lee, et al., "SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21% tuning range (invited paper)," in IEEE Compound Semiconductor Integrated Circuuits Symposium, Monterey, CA, Oct. 2004, pp. 179-182.
2. B. A. Floyd, et al., "SiGe bipolar transceiver circuits operating at 60 GHz," IEEE J. Solid-State Circuits, vol. 40, pp. 156-167, Jan. 2005.
3. M. Rudolph, et al., "An HBT noise model valid up to transit frequency," IEEE Electron Device Lett., vol. 20, pp. 24-26, Jan. 1999.
4. B. Banerjee, et al., "Modeling of broadband noise in complementary (npn+pnp) SiGe HBTs," in IEEE Radio Frequency Integrated Circuits Symposium, June 2005, pp. 553-556.
5. S. P. Voinigescu, et al., "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid-State Circuits, vol. 32, pp. 1430-1439, Sept. 1997.
6. G. Niu, et al., "A unified approach to RF and microwave noise parameter modeling in bipolar transistors," IEEE Trans. Electron Devices, vol. 48, pp. 2568-2574, Nov. 2001.
7. A. van der Ziel, Noise in Solid State Devices and Circuits. New York: John Wiley & Sons, Inc., 1986.
8. H. Hillbrand et al., "An efficient method for computer aided noise analysis and linear amplifier networks," IEEE Trans. Circuits Syst., vol. CAS-23, pp. 235-238, Apr. 1976.
9. _, "correction to 'An efficient method for computer aided noise analysis and linear amplifier networks'," IEEE Trans. Circuits Syst., vol. CAS-23, p. 691, Nov. 1976.
10. K. Aufinger et al., "RF noise models for bipolar transistors-a critical comparison," in Proceedings of the 2001 Bipolar/BiCMOS Circuits and Technology Meeting, Sept. 2001, pp. 110-113.
11. ATLAS User's Manual, Silvaco International, Sept. 2004.
12. T. Nakadai et al., "Measuring the base reistance of bipolar transistors," in Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Sept. 1991, pp. 200-203.
13. M. Koolen, et al., "An improved de-embedding technique for on-wafer high-frequency characterization," in Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Sept. 1991, pp. 188-191.