He implantation to control B diffusion in crystalline and preamorphized Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 386-390

  Bruno, E ^a   Mirabella, S ^a   Priolo, F ^a   Kuitunen, K ^b   Tuomisto, F ^b   Slotte, J ^b   Giannazzo, F ^c   Bongiorno, C ^c   Raineri, V ^c   Napolitani, E ^d  

^a UNIVERSITY OF CATANIA   (Italy)

^b AALTO UNIVERSITY   (Finland)

^c CNR IMM   (Italy)

^d UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BORON; CRYSTALLINE MATERIALS; DIFFUSION; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY;

END-OF-RANGE (EOR) DEFECTS; OPEN-VOLUME DEFECTS; SELF-INTERSTITIALS;

HELIUM;

EID: 38849116500     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2816927     Document Type: Article

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