He implantation in Si for B diffusion control

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 181-185

  Bruno, E ^a   Mirabella, S ^a   Napolitani, E ^b   Giannazzo, F ^c   Raineri, V ^c   Priolo, F ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c CNR   (Italy)

Author keywords

Boron; Diffusion; Ion implantation; Nanovoids; Point defects control; Silicon

Indexed keywords

ANNEALING; DIFFUSION; HELIUM; POINT DEFECTS; POLYSILICON; SEMICONDUCTING BORON;

DIFFUSION CONTROL; GETTERING EXPERIMENTS; NANOVOIDS; SELF INTERSTITIALS;

ION IMPLANTATION;

EID: 33947679674     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.034     Document Type: Article

References (22)

1. Stolk P.A., Gossmann J.H.-J., Eaglesham D.J., Jacobson D.C., Rafferty C.S., Gilmer G.H., Jaraìz M., Poate J.M., Luftman H.S., and Haynes T.E. J. Appl. Phys. 81 (1997) 6031 and references therein
2. Jain S.C., Schoenmaker W., Lindsay R., Stolk P.A., Decoutere S., Willander M., and Maes H.E. J. Appl. Phys. 91 (2002) 8919 and references therein
3. Pelaz L., Jaraiz M., Gilmer G.H., Gossmann H.-J., Rafferty C.S., Eaglesham D.J., and Poate J.M. Appl. Phys. Lett. 70 (1997) 17
4. Mirabella S., Bruno E., Priolo F., De Salvador D., Napolitani E., Drigo A.V., and Carnera A. Appl. Phys. Lett. 83 (2003) 680
5. Bruno E., Mirabella S., Impellizzeri G., Priolo F., Giannazzo F., Raineri V., and Napolitani E. Appl. Phys. Lett. 87 (2005) 133110
6. De Salvador D., Napolitani E., Bisognin G., Carnera A., Bruno E., Mirabella S., Impellizzeri G., and Priolo F. Appl. Phys. Lett. 87 (2005) 221902
7. Griffioen C.C., Evans J.H., De Jong P.C., and Van Veen A. Nucl. Instr. and Meth. B 27 (1987) 417
8. Raineri V., Saggio M., and Rimini E. J. Mater. Res. 15 (2000) 1449 and references therein
9. Raineri V., and Campisano S.U. Appl. Phys. Lett. 69 (1996) 1783
10. Wong-Leung J., Williams J.S., and Petravic M. Appl. Phys. Lett. 72 (1998) 2418
11. Wang S., and Zhu P. Mater. Sci. Eng. B 72 (2000) 142
12. Cayrel F., Alquier D., Mathiot D., Ventura L., Vincent L., Gaudin G., and Jérisian R. Nucl. Instr. and Meth. B 216 (2004) 291
13. Mirabella S., Bruno E., Priolo F., Giannazzo F., Buongiorno C., Raineri V., Napolitani E., and Carnera A. Appl. Phys. Lett. 88 (2006) 191910
14. Raineri V., Fallica P.G., Percolla G., Battaglia A., Barbagallo M., and Campisano S.U. J. Appl. Phys. 78 (1995) 3727
15. Peeva A., Fichtner P.F.P., da Silva D.L., Behar M., Koegler R., and Skorupa W. J. Appl. Phys. 91 (2002) 69
16. Raineri V., Fallica P.G., and Libertino S. J. Appl. Phys. 79 (1996) 9012
17. Raineri V., Saggio M., Frisina F., and Rimini E. Solid State Electron. 42 (1998) 2295
18. Roqueta F., Alquier D., Ventura L., Dubois Ch., and Jérisian R. Nucl. Instr. and Meth. B 183 (2001) 318
19. Roqueta F., Grob A., Grob J.J., Jérisian R., Stoquert J.P., and Ventura L. Nucl. Instr. and Meth. B 147 (1999) 298
20. Raineri V., Coffa S., Szilàgyi E., Gyulai J., and Rimini E. Phys. Rev. B 61 (2000) 937
21. Perichaud I., Yakimov E., Martinuzzi S., and Dubois C. J. Appl. Phys. 90 (2001) 2806
22. Cowern N.E.B., Mannino G., Stolk P.A., Roozeboom F., Huizing H.G.A., van Berkum J.G.M., Cristiano F., Claverie A., and Jaraìz M. Phys. Rev. Lett. 82 (1999) 4460