Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

Physical Review Letters

Volumn 94, Issue 16, 2005, Pages

  Rummukainen, M ^a   Makkonen, I ^a   Ranki, V ^a   Puska, M J ^a   Saarinen, K ^a   Gossmann, H J L ^b  

^a AALTO UNIVERSITY   (Finland)

^b AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOMENTUM DENSITY; MOMENTUM RATIO; VACANCY CLUSTERS; VACANCY-IMPURITY COMPLEXES;

ANTIMONY; CONCENTRATION (PROCESS); CRYOGENICS; ELECTRONIC STRUCTURE; IMPURITIES; METHOD OF MOMENTS; MOLECULAR BEAM EPITAXY; POSITRON ANNIHILATION SPECTROSCOPY; SILICON;

COMPLEXATION;

EID: 18144412072     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.165501     Document Type: Article

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