H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown Siy O1-y: H (y>13) thin films annealed in (Ar+5% H2)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 3, 2006, Pages 817-820

  Comedi, D ^a   Zalloum, O H Y ^a   Irving, E A ^a   Wojcik, J ^a   Mascher, P ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL GROWTH; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS; X RAY DIFFRACTION;

PASSIVATION EFFICIENCIES; QUANTUM CONFINEMENT; SILICON NANOCLUSTERS;

NANOSTRUCTURED MATERIALS;

EID: 33646562528     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2177227     Document Type: Article

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