SCOPUS 정보 검색 플랫폼

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 1002-1006

Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions

(8) Zhao, J a Yu, Y H a Mao, D S a Lin, Z X a Jiang, B Y a Yang, G Q a Liu, X H a Zou, Shichang a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

Ion implantation; Light emitting materials; Photoluminescence; SiO2 films

Indexed keywords

ANNEALING; ELECTRON SPIN RESONANCE SPECTROSCOPY; ION IMPLANTATION; NITROGEN; OPTICAL MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THERMAL EFFECTS;

LIGHT-EMITTING MATERIALS;

SEMICONDUCTING FILMS;

EID: 0033513916 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00692-2 Document Type: Article

Times cited : (9)

References (12)

1
- 0141775174
- L.T. Canham, Appl. Phys. Lett. 57 (1990) 1046.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1046
- Canham, L.T.¹

2
- 0021463321
- D.J. DiMaria, J.R. Kirtley, E.J. Pakulis, D.W. Dong, T.S. Kuan, F.L. Pesavento, T.N. Theis, J.A. Cutro, S.D. Brorson, J. Appl. Phys. 56 (1984) 401.
- (1984) J. Appl. Phys. , vol.56 , pp. 401
- DiMaria, D.J.¹ Kirtley, J.R.² Pakulis, E.J.³ Dong, D.W.⁴ Kuan, T.S.⁵ Pesavento, F.L.⁶ Theis, T.N.⁷ Cutro, J.A.⁸ Brorson, S.D.⁹

3
- 19844375984
- P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G.F. Cerofolini, L. Meda, E. Grilli, Guzzi, Appl. Phys. Lett. 66 (1995) 851.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 851
- Mutti, P.¹ Ghislotti, G.² Bertoni, S.³ Bonoldi, L.⁴ Cerofolini, G.F.⁵ Meda, L.⁶ Grilli, E.⁷ Guzzi⁸

4
- 0000234653
- T. Komoda, J. Kelly, F. Cristiano, A. Nejim, P.L.F. Hemment, K.P. Homewood, R. Gwilliam, J.E. Mynard, B.J. Sealy, Nucl. Instr. and Meth. B 96 (1995) 387.
- (1995) Nucl. Instr. and Meth. B , vol.96 , pp. 387
- Komoda, T.¹ Kelly, J.² Cristiano, F.³ Nejim, A.⁴ Hemment, P.L.F.⁵ Homewood, K.P.⁶ Gwilliam, R.⁷ Mynard, J.E.⁸ Sealy, B.J.⁹

5
- 0028763293
- T. Shimizu-Iwayama, S. Nakao, K. Saitoh, Appl. Phys. Lett. 65 (1994) 1814.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1814
- Shimizu-Iwayama, T.¹ Nakao, S.² Saitoh, K.³

6
- 36449001024
- B.H. Augustine, E.A. Irene, Y.J. He, K.J. Price, L.E. McNeil, K.N. Christensen, D.M. Maher, J. Appl. Phys. 78 (1995) 4020.
- (1995) J. Appl. Phys. , vol.78 , pp. 4020
- Augustine, B.H.¹ Irene, E.A.² He, Y.J.³ Price, K.J.⁴ McNeil, L.E.⁵ Christensen, K.N.⁶ Maher, D.M.⁷

7
- 0007294688
- K. Oyoshi, T. Tagami, S. Tanaka, J. Appl. Phys. 68 (1990) 3653.
- (1990) J. Appl. Phys. , vol.68 , pp. 3653
- Oyoshi, K.¹ Tagami, T.² Tanaka, S.³

8
- 0001502233
- H. Hosono, Y. Abe, K. Oyoshi, S. Tanaka, Phys. Rev. B 43 (1991) 11966.
- (1991) Phys. Rev. B , vol.43 , pp. 11966
- Hosono, H.¹ Abe, Y.² Oyoshi, K.³ Tanaka, S.⁴

9
- 36449006212
- K.V. Shcheglov, C.M. Yang, K.J. Vahala, H.A. Atwater, Appl. Phys. Lett. 66 (1995) 745.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 745
- Shcheglov, K.V.¹ Yang, C.M.² Vahala, K.J.³ Atwater, H.A.⁴

10
- 0037892869
- K.S. Seol, Y. Ohki, H. Nishikawa, J. Appl. Phys. 80 (1996) 6444.
- (1996) J. Appl. Phys. , vol.80 , pp. 6444
- Seol, K.S.¹ Ohki, Y.² Nishikawa, H.³

11
- 0001663659
- H. Nishikawa, E. Watanabe, D. Ito, Y. Sakurai, K. Nagasawa, Y. Ohki, J. Appl. Phys. 80 (1996) 3513.
- (1996) J. Appl. Phys. , vol.80 , pp. 3513
- Nishikawa, H.¹ Watanabe, E.² Ito, D.³ Sakurai, Y.⁴ Nagasawa, K.⁵ Ohki, Y.⁶

12
- 9344254203
- 22-26 June, Kyoto, Japan
- J. Zhao, D.S. Mao, Z.X. Lin, B.Y. Jiang, Y.H. Yu, G.Q. Yang, X.H. Liu, S.C. Zou, The International Conference on Ion Implantation Technology (IIT'98), 22-26 June, Kyoto, Japan.
- The International Conference on Ion Implantation Technology (IIT'98)
- Zhao, J.¹ Mao, D.S.² Lin, Z.X.³ Jiang, B.Y.⁴ Yu, Y.H.⁵ Yang, G.Q.⁶ Liu, X.H.⁷ Zou, S.C.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.