Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-rich Si oxide films

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1561-1569

  Comedi, David ^a,b   Zalloum, Othman H Y ^a   Wojcik, Jacek ^a   Mascher, Peter ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSIDAD NACIONAL DE TUCUMÁN   (Argentina)

Author keywords

Nanotechnology; Photoluminescence (PL); Plasma chemical vapor deposition (CVD); Semiconductor films; Silicon

Indexed keywords

HYDROGENATION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON; THIN FILMS;

ANNEALING TEMPERATURE; PL SPECTRA; SEMICONDUCTOR FILMS;

LIGHT EMISSION;

EID: 33845682868     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.885388     Document Type: Article

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