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Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 508-512

Si nanocrystal-containing SiOx (x < 2) produced by thermal annealing of PECVD realized thin films

(4) Bedjaoui, M a Despax, B a Caumont, M a Bonafos, C b

a d'Hydraulique et des Telecommunications (France)

b CEMES CNRS (France)

Author keywords

Infrared spectroscopy; PECVD; Raman spectroscopy; Silicon nanocrystals; Spectroscopic ellipsometry

Indexed keywords

APPROXIMATION THEORY; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SILANES; SILICON NITRIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION (BEMA); FOURROUHI-BLOOMER (FH) MODELS; SILICON NANOCRYSTALS; SPECTROSCOPIC ELLIPSOMETRY (SE);

SILICA;

EID: 27844454289 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.066 Document Type: Conference Paper

Times cited : (13)

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