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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 A, 2003, Pages

Planar Schottky Diodes on High Quality A-plane GaN

(7) Adivarahan, Vinod a Chen, Changqing a Yang, Jinwei a Gaevski, Mikhail a Shatalov, Maxim a Simin, Grigory a Khan, Muhammad Asif a

a University of South Carolina (United States)

Author keywords

A plane GaN; ELOG; Ohmic contact; R plane sapphire; Schottky diode

Indexed keywords

DIFFUSION; ELECTRON MOBILITY; EPITAXIAL GROWTH; HOLE MOBILITY; OHMIC CONTACTS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER INJECTION;

GALLIUM NITRIDE;

EID: 0344083339 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l1136 Document Type: Article

Times cited : (13)

References (13)

1
- 0001689993
- F. Bernardini and V. Fiorentini: Phys. Rev. B57 (1998) 9427.
- (1998) Phys. Rev. , vol.B57 , pp. 9427
- Bernardini, F.¹ Fiorentini, V.²

2
- 79957932778
- H. M. Ng: Appl. Phys. Lett. 80 (2002) 4369.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4369
- Ng, H.M.¹

3
- 79955984192
- M. D. Craven, S. H. Lim, F. Wu, J. S. Speck and S. P. DenBaars: Appl. Phys. Lett. 81 (2002) 469.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 469
- Craven, M.D.¹ Lim, S.H.² Wu, F.³ Speck, J.S.⁴ Denbaars, S.P.⁵

4
- 79956015209
- M. D. Craven, S. H. Lim, F. Wu, J. S. Speck and S. P. DenBaars: Appl. Phys. Lett. 81 (2002) 1201.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1201
- Craven, M.D.¹ Lim, S.H.² Wu, F.³ Speck, J.S.⁴ Denbaars, S.P.⁵

5
- 0041363410
- C. Q. Chen, J. W. Yang, H. M. Wang, J. P. Zhang, V. Adivarahan, M. Gaevski, E. Kuokstis, Z. Gong, M. Su and M. Asif Khan: Jpn. J. Appl. Phys. 42 (2003) L640.
- (2003) Jpn. J. Appl. Phys. , vol.42
- Chen, C.Q.¹ Yang, J.W.² Wang, H.M.³ Zhang, J.P.⁴ Adivarahan, V.⁵ Gaevski, M.⁶ Kuokstis, E.⁷ Gong, Z.⁸ Su, M.⁹ Asif Khan, M.¹⁰

6
- 0141606729
- C. Q. Chen, J. P. Zhang, J. W. Yang, V. Adivarahan, S. Rai, S. Wu, H. M. Wang, W. H. Sun, M. Su, Z. Gong, M. Gaevski, E. Kuokstis and M. Asif Khan: Jpn. J. Appl. Phys. 42 (2003) L818.
- (2003) Jpn. J. Appl. Phys. , vol.42
- Chen, C.Q.¹ Zhang, J.P.² Yang, J.W.³ Adivarahan, V.⁴ Rai, S.⁵ Wu, S.⁶ Wang, H.M.⁷ Sun, W.H.⁸ Su, M.⁹ Gong, Z.¹⁰ Gaevski, M.¹¹ Kuokstis, E.¹² Asif Khan, M.¹³

7
- 0034140699
- Z. Z. Bandic, P. M. Bridger, E. C. Piquette and T. C. McGill: Solid State Electron. 44 (2000) 221.
- (2000) Solid State Electron. , vol.44 , pp. 221
- Bandic, Z.Z.¹ Bridger, P.M.² Piquette, E.C.³ McGill, T.C.⁴

8
- 0000197479
- L. Chernyak, A. Osinsky, H. Temkin, J. W. Yang, Q. Chen and M. A. Khan: Appl. Phys. Lett. 69 (1996) 2531.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2531
- Chernyak, L.¹ Osinsky, A.² Temkin, H.³ Yang, J.W.⁴ Chen, Q.⁵ Khan, M.A.⁶

9
- 0021626522
- J. Boersma, J. J. E. Indenkleef and H. K. Kuiken: J. Eng. Math. 18 (1984) 315.
- (1984) J. Eng. Math. , vol.18 , pp. 315
- Boersma, J.¹ Indenkleef, J.J.E.² Kuiken, H.K.³

10
- 0035448057
- L. Chernyak and A. Osinsky: Solid State Electron. 45 (2001) 1687.
- (2001) Solid State Electron. , vol.45 , pp. 1687
- Chernyak, L.¹ Osinsky, A.²

11
- 0347083263
- J. C. Gonzalez, K. L. Bunker and P. E. Russel: Appl. Phys. Lett. 79 (2001) 1567.
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1567
- Gonzalez, J.C.¹ Bunker, K.L.² Russel, P.E.³

12
- 0345153053
- note
- TLM approach is not directly applicable in the case of ELOG material due to large layer thickness. When processing the data, we have taken into account that both the effective channel thickness and transfer length increase with the contact pad separation.

13
- 0003546026
- Clarendon Press, Oxford, 2nd ed.
- E. H. Rhoderick and R. H. Williams: Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1994) 2nd ed.
- (1994) Metal-Semiconductor Contacts
- Rhoderick, E.H.¹ Williams, R.H.²

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