Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 257-260

  Imura, Masataka ^a   Nakano, Kiyotaka ^a   Narita, Gou ^a   Fujimoto, Naoki ^a   Okada, Narihito ^a   Balakrishnan, Krishnan ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a   Noro, Tadashi ^b   Takagi, Takashi ^b   Bandoh, Akira ^c  

^a MEIJO UNIVERSITY   (Japan)

^b IBIDEN CO LTD   (Japan)

^c Showa Denko Materials Co   (Japan)

Author keywords

A2. ELO; A2. TEM; A3. HT MOVPE; A3. Metal organic vapor phase epitaxy; B1. AlN; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION;

ATOMICALLY FLAT SURFACES; DISLOCATION DENSITY; EPITAXIAL LATERAL OVERGROWTH (ELO); LOOP STRUCTURE;

EPITAXIAL GROWTH;

EID: 33846428433     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.043     Document Type: Article

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