Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

Applied Physics Letters

Volumn 87, Issue 21, 2005, Pages 1-3

  Sun, W H ^a   Zhang, J P ^a,c   Yang, J W ^a   Maruska, H P ^a   Khan, M Asif ^a   Liu, R ^b   Ponce, F A ^b  

^a University of South Carolina   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c Sensor Electronics Technology Inc

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT GROWTH; DISLOCATION FILTERING; FINE STRUCTURE; PULSED-ATOMIC LAYER EPITAXY (PALE);

COMPRESSIVE STRENGTH; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; STRAIN; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 27844599328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2136424     Document Type: Article

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