Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer

Applied Physics Letters

Volumn 87, Issue 15, 2005, Pages 1-3

  Wang, T ^a   Bai, J ^a   Parbrook, P J ^a   Cullis, A G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POROUS MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ALN BUFFER; DISLOCATION REDUCTION;

ALUMINUM COMPOUNDS;

EID: 28344453539     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2089182     Document Type: Article

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