Characteristics of InGaN light-emitting diodes on GaN substrates with low threading dislocation densities

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 246-250

  Akita, Katsushi ^a   Kyono, Takashi ^a   Yoshizumi, Yusuke ^a   Kitabayashi, Hiroyuki ^a   Katayama, Koji ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; THREADING DISLOCATION DENSITIES (TDD);

CATHODOLUMINESCENCE; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 33846462461     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673549     Document Type: Conference Paper

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