Diffusion induced line edge roughness

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 415-422

  Stewart, Michael D ^a   Schmid, Gerard M ^a   Goldfarb, Dario L ^b   Angelopoulos, Marie ^b   Willson, C Grant ^a  

^a The University of Texas at Austin   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Acid diffusion; Atomic force microscopy; Line edge roughness; Mesoscale simulation

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DIFFUSION; MASKS; PHOTORESISTS; RESINS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS;

ACID DIFFUSION; LINE EDGE ROUGHNESS; PHOTORESIST CHEMISTRY;

LITHOGRAPHY;

EID: 0141611735     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483734     Document Type: Conference Paper

References (20)

1. G. M. Schmid, M. D. Stewart, V. K. Singh, and C. G. Willson, J. Vac. Sci. Technol. B, 20, 185 (2002).
2. Technology Roadmap for Semiconductors (2001 Edition).
3. G. W. Reynolds, J. W. Taylor, and C. J. Brooks, J. Vac. Sci. Technol. B, 17, 3420 (1999).
4. N. Rau, F. Stratton, C. Fields, T. Ogawa, A. Neureuther, R. Kubena, and G. Willson, J. Vac. Sci. Technol. B 16, 3784 (1998).
5. M. I. Sanchez, W. D. Hinsberg, F. A. Houle, J. A. Hoffnagle, H. Ito, and C. Nguyen, Proc. SPIE, 3678, 160 (1999).
6. J. Shin, G. Han, Y. Ma, K. Moloni, and F. Cerrina, J. Vac. Sci. Technol. B, 19, 2890 (2001).
7. T. Yamaguchi, H. Namatsu, M. Nagase, K. Kurihara, and Y. Kawai, Proc. SPIE, 3678, 617 (1999).
8. T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki, and K. Kurihara, Appl. Phys. Lett., 71, 2388 (1997).
9. T. Yoshimura, Y. Nakayama, and S. Okazaki, J. Vac. Sci. Technol. B 10, 185 (1992).
10. T. Ushirogouchi, K. Asakawa, M. Nakase and A. Hongu, Proc. SPIE, 2438, 160 (1995).
11. E. Shiobara, D. Kawamura, K. Matsunaga, T. Koibe, S. Mimotogi, T. Azuma and Y. Onishi, Proc. SPIE, 3333, 313 (1998).
12. L. W. Flanagin, V. K. Singh, and C. G. Willson, J. Vac. Sci. Technol. B, 17, 1371 (1999).
13. G. W. Reynolds, and J. W. Taylor, J. Vac. Sci. Technol. B, 17, 334 (1991).
14. S.D. Burns et al, Proc. SPIE, 4345 (2001)
15. D. He, F. Cerrina, J. Vac Sci. Technol. B, 16, 3748 (1998)
16. H.P Koh, Q.Y. Lin, X. Hu, L. Chan, Proc. SPIE 3999, 240, (2000)
17. G.M. Schmid, V.K. Singh, L.W. Flanagin, M.D. Stewart, S.D. Burns, C.G. Willson, Proc. SPIE, 3999, 675 (2000)
18. G.M. Schmid, M.D. Smith C.A. Mack, V.K. Singh, S.D. Burns, C.G. Willson, Proc. SPIE, 4345, 1037 (2001).
19. D. L. Goldfarb, M. Angelopoulos, E. K Lin, R. L. Jones, C. L. Soles, J. L. Lenhart, and W. Wu, J. Vac. Sci. Technol. B, 19, 2699 (2001).
20. E. K. Lin, C.L. Soles, D.L. Goldfarb, B.C. Trinque, S.D. Burns, R.L. Jones, J.L. Lenhart, M. Angelopoulos, C.G. Willson, S.K. Satija, W. Wu, Science, 297, 372 (2002)