Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3105-3110

  Yoshizawa, Masaki ^a   Moriya, Shigeru ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRON SCATTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE TENSION; X RAYS;

RESOLUTION LIMIT (RL);

ELECTRON BEAM LITHOGRAPHY;

EID: 0034317711     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319844     Document Type: Article

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