Radiation tolerance of nanocrystal-based flash memory arrays against heavy ion irradiation

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2196-2203

  Cester, Andrea ^a,b,c   Wrachien, Nicola ^a,b   Gasperin, Alberto ^a,b,c   Paccagnella, Alessandro ^a,b,c   Portoghese, Rosario ^d   Gerardi, Cosimo ^d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

CMOS memory integrated circuits; Heavy ion irradiation; Radiation effects; Semiconductor device reliability; Semiconductor memories

Indexed keywords

RADIATION TOLERANCE; SEMICONDUCTOR DEVICE RELIABILITY; SEMICONDUCTOR MEMORY;

CMOS INTEGRATED CIRCUITS; HEAVY IONS; ION BOMBARDMENT; NANOCRYSTALS; RADIATION EFFECTS; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 37249071391     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.908757     Document Type: Conference Paper

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