Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3045-3050

  Choi, B K ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Massengill, Lloyd W ^a   Galloway, K F ^a   Shaneyfelt, M R ^b   Meisenheimer, T L ^b   Dodd, P E ^b   Schwank, J R ^b   Lee, Y M ^c   John, R S ^d   Lucovsky, G ^d  

^a VANDERBILT UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c North Carolina State University   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Heavy ion irradiation; Radiation effect; Single event effect; Ultra thin gate dielectric films

Indexed keywords

DEFECTS; DEGRADATION; ELECTRIC BREAKDOWN OF SOLIDS; ENERGY TRANSFER; GATES (TRANSISTOR); HEAVY IONS; INTEGRATED CIRCUITS; IRRADIATION; LEAKAGE CURRENTS; MOS CAPACITORS; NITROGEN OXIDES; PERCOLATION (SOLID STATE); RADIATION EFFECTS; SILICA; ULTRATHIN FILMS;

LATENT DEFECTS;

DIELECTRIC FILMS;

EID: 0036952894     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805389     Document Type: Conference Paper

References (10)

1. F.W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, and G. L. Hash, "Single event gate rupture in thin gate oxides," IEEE Trans. Nucl. Sci., vol. 44, pp. 2345-2352, Dec. 1997.
2. L. W. Massengill, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. Johnson, and G. Lucovsky, "Heavy-ion-induced breakdown in ultrathin gate oxides and high-k dielectrics," IEEE Trans. Nucl. Sci., vol. 48, pp. 1904-1912, Dec. 2001.
3. J. S. Suehle, E. M. Vogel, P. Roitman, J. F. Conley, Jr., A. H. Johnston, B. Wang, J. B. Bernstein, and C. E. Weintraub, "Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation," Appl. Phys. Lett., vol. 80, no. 7, pp. 1282-1284, 2002.
4. 3 gate dielectric films owing to heavy-ion irradiation," Electron. Lett., vol. 38, pp. 157-158, Apr. 2002.
5. J. Suñé "New physics-based analytic approach to the thin-oxide break-down statistics," IEEE Electron Device Lett., vol. 22, pp. 296-298, June 2001.
6. +-polysilicon gated PMOSFETs by combined remote plasma enhanced CVD/thermal oxidation process," IEEE Electron Device Lett., vol, 19, pp. 367-369, Oct. 1998.
7. F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. K. Hash, L. P. Schanwald, R. A. Loemker, K. S. Krisch, M. L. Green, B. E. Weir, and P. J. Silverman, "Precursor ion damage and angular dependence of single event gate rupture in thin oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2509-2518, Dec. 1998.
8. J. H. Stathis, "Percolation models for gate oxide breakdown," J. Appl. Phys., vol. 86, no. 10, pp. 5757-5766, 1999.
9. 2 films," in Proc. IEEE 39th Annu. Int. Reliability Physics Symp., 2001, pp. 367-379.
10. A. Cester, A. Paccagnella, J. Suñé, and E. Miranda, "Post-radiation-induced soft breakdown conduction properties as a function of temperature," Appl. Phys. Lett., vol. 79, no. 9, pp. 1336-1338, 2001.