Wear-out and breakdown of ultra-thin gate oxides after irradiation

Electronics Letters

Volumn 38, Issue 19, 2002, Pages 1137-1139

  Cester, A ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; IRRADIATION; LEAKAGE CURRENTS; MOS CAPACITORS;

ULTRA-THIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0037068725     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020757     Document Type: Article

References (6)

1. SCARPA, A., PACCAGNELLA, A., MONTERA, F., GHIBAUDO, G., PANANAKAKIS, G., GHIDINI, G., and FUOCHI, PG.: 'Ionizing radiation induced leakage current on ultra-thin gate oxides', IEEE Trans. Nucl. Sci., 1997, 44, pp. 1818-1825.
2. CESCHIA, M., PACCAGNELLA, A., CESTER, A., SCARPA, A., and GHIDINI, G.: 'Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides', IEEE Trans. Nucl. Sci., 1998, 45, pp. 2375-2382.
3. CESCHIA, M., PACCAGNELLA, A., CESTER, A., GHIDINI, G., and WYSS, J.: 'From radiation induced leakage current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide'. Proc. of Materials Research Society Symp., 2000, Vol. 592, pp. 201-206.
4. CESTER, A., BANDIERA, A., CESCHIA, M., GHIDINI, G., and PACCAGNELLA, A.: 'Noise characteristics of radiation-induced soft breakdown current in ultra-thin gate oxides', IEEE Trans. Nucl. Sci., 2001, 48, pp. 2093-2100.
5. SEXTON, F.W., FLEETWOOD, D.M., SHANEYFELT, M.R., DODD, P.E., HASH, G.L., SCHANWALD, L.P., LOEMKER, R.A., KRISCH, K.S., GREEN, M.L., WEIR., B.E., and SILVERMAN, P.J.: 'Precursor ion damage and angular dependence of single event gate rupture in thin oxides', IEEE Trans Nucl. Sci., 1998, 45, pp. 2509-2518.
6. MONSIEUR, F., VINCENT, E., PANANAKAKIS, G., and GHIBAUDO, G.: 'Wearout, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides', Microelectron. Reliab., 2001, 41, pp. 1035-1039.