Impact of heavy-ion strikes on nanocrystal non volatile memory cell arrays

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3195-3202

  Cester, Andrea ^a,b,c   Gasperin, Alberto ^a,b,c   Wrachien, Nicola ^b   Paccagnella, Alessandro ^a,b,c   Ancarani, Valentina ^d   Gerardi, Cosimo ^d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

CMOS memory integrated circuits; Heavy ion irradiation; Non volatile memories; Radiation effects

Indexed keywords

CHARGE LOSS; CMOS MEMORY INTEGRATED CIRCUITS; HEAVY ION IRRADIATION; NANOCRYSTAL STORAGE;

ARRAYS; CMOS INTEGRATED CIRCUITS; HEAVY IONS; NANOSTRUCTURED MATERIALS; RADIATION EFFECTS; STORAGE ALLOCATION (COMPUTER); TRANSCONDUCTANCE;

NONVOLATILE STORAGE;

EID: 33846312092     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885004     Document Type: Conference Paper

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