Radiation-induced modifications of the electrical characteristics of nanocrystal memory cells and arrays

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3693-3700

  Gasperin, Alberto ^a,b,c   Cester, Andrea ^a,b,c   Wrachien, Nicola ^b   Paccagnella, Alessandro ^a,b,c   Ancarani, Valentina ^d   Gerardi, Cosimo ^d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

CMOS memory integrated circuits; Nonvolatile memories; Proton irradiation; Radiation effects

Indexed keywords

DATA RETENTION; ELECTRICAL STRESSES; NANOCRYSTALS MEMORIES;

CMOS INTEGRATED CIRCUITS; FLASH MEMORY; NONVOLATILE STORAGE; PROTON IRRADIATION; RADIATION EFFECTS;

CRYSTAL STRUCTURE;

EID: 33846278687     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885109     Document Type: Conference Paper

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