Accelerated Wear-Out of Ultra-Thin Gate Oxides After Irradiation

IEEE Transactions on Nuclear Science

Volumn 50, Issue 3, 2003, Pages 729-734

  Cimino, Salvatore ^a   Paccagnella, Alessandro ^a   Ghibaudo, Gerard ^b   Ghidini, Gabriella ^c   Wyss, Jeffrey ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (Italy)

^d UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

Author keywords

Accelerated breakdown; CMOS devices reliability; radiation stresses; thin oxide reliability

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTRIC CURRENTS; HEAVY IONS; IRRADIATION; OXIDES; RADIATION DAMAGE; RELIABILITY; STRESSES;

ELECTRICAL STRESS; GATE CURRENT; HEAVY ION IRRADIATION; LINEAR ENERGY TRANSFER; RADIATION STRESSES; ULTRA THIN GATE OXIDES;

MOS CAPACITORS;

EID: 0038383138     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2003.811281     Document Type: Article

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