Annealing properties of open volumes in HfSiO x and HfAlO x gate dielectrics studied using monoenergetic positron beams

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Uedono, A ^a,c   Ikeuchi, K ^a   Yamabe, K ^a,c   Ohdaira, T ^b   Muramatsu, M ^b   Suzuki, R ^b   Hamid, A S ^c   Chikyow, T ^c   Torii, K ^d   Yamada, K ^c,e  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION RADIATIONS; ATOMIC LAYER DEPOSITION; DOPPLER BROADENING SPECTRA; GATE DIELECTRICS; MONOENERGETIC POSITRON BEAMS;

ANNEALING; DIELECTRIC MATERIALS; DIFFUSION; FABRICATION; GATES (TRANSISTOR); METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROPROCESSOR CHIPS; MOSFET DEVICES; POSITRONS; RADIATION;

HAFNIUM COMPOUNDS;

EID: 23844517769     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1977194     Document Type: Article

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