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Journal of the Electrochemical Society

Volumn 150, Issue 10, 2003, Pages

XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA

(5) Zhan, Nian a Poon, M C a Kok, C W a Ng, K L a Wong, Hei b

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; OXYGEN; PERMITTIVITY; RAPID THERMAL ANNEALING; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

THERMAL INSTABILITY;

ELECTROCHEMISTRY;

EID: 0142021045 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1608006 Document Type: Article

Times cited : (80)

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