Nitrogen incorporation into hafnium oxide films by plasma immersion ion implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 B, 2007, Pages 3234-3238

  Sen, Banani ^a   Wong, Hei ^a   Yang, B L ^a   Huang, A P ^a   Chu, P K ^a   Filip, V ^a   Sarrar, C K ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b JADAVPUR UNIVERSITY   (India)

Author keywords

Hafnium oxide; Nitrogen; Oxygen vacancy; X ray photoelectron spectroscopy

Indexed keywords

DEPOSITION; HAFNIUM COMPOUNDS; ION IMPLANTATION; PLASMAS; TRACE ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDES; NITROGEN INCORPORATION; OXYGEN VACANCY;

OXIDE FILMS;

EID: 34547862122     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3234     Document Type: Article

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