Analysis of options in double-gate MOS technology: A circuit perspective

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3361-3368

  Cakici, Riza Tamer ^a   Roy, Kaushik ^b  

^a TEXAS INSTRUMENTS   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Asymmetric double gate MOS (DGMOS); DGMOSFETs; Independent gate technology; MOSFET; Schmitt trigger; Symmetric DGMOS; Trigger circuits

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ENERGY DISSIPATION; GATES (TRANSISTOR); TRIGGER CIRCUITS;

DOUBLE-GATE METAL OXIDE SEMICONDUCTOR (DGMOS); INDEPENDENT-GATE TECHNOLOGY; SCHMITT TRIGGER;

MOSFET DEVICES;

EID: 36849035755     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.909057     Document Type: Article

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