Physical compact model for threshold voltage in short-channel double-gate devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 223-226

  Kim, Keunwoo ^a   Fossum, J G ^b   Chuang, Ching Te ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

Back; Capacitance; Current voltage characteristics; Extrapolation; Intrusion detection; MOSFET circuits; Photonic band gap; Predictive models; Threshold voltage; Transconductance

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; EXTRAPOLATION; FIELD EFFECT TRANSISTORS; INTRUSION DETECTION; MOS DEVICES; PHOTONIC BAND GAP; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

BACK; BARRIER LOWERING; DOUBLE-GATE DEVICE; DRAIN-INDUCED BARRIER LOWERING; MOSFET CIRCUITS; NUMERICAL DEVICE SIMULATION; PREDICTIVE MODELS; SHORT CHANNELS;

SEMICONDUCTOR DEVICES;

EID: 84943269117     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233677     Document Type: Conference Paper

References (8)

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