Influence of N on the electronic properties of GaAsN alloy films and heterostructures

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Reason, M ^a   Jin, Y ^a   McKay, H A ^a   Mangan, N ^a   Mao, D ^a   Goldman, R S ^a   Bai, X ^a   Kurdak, C ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON GAS MOBILITY; LONG-RANGE IONIZED SCATTERING; MAGNETORESISTANCE MEASUREMENTS; MODULATION-DOPED HETEROSTRUCTURES;

THIN FILMS;

EID: 36649004763     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2798629     Document Type: Article

References (50)

1. I. A. Buyanova, W. M. Chen, and B. Monemar, MRS Internet J. Nitride Semicond. Res. 6, 2 (2001).
2. J. F. Geisz and D. J. Friedman, Semicond. Sci. Technol. 17, 769 (2002).
3. D. Gollub, S. Moses, and A. Forchel, IEEE J. Quantum Electron. 40, 337 (2004).
4. S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, Appl. Phys. Lett. 74, 729 (1999).
5. P. C. Chang, N. Y. Li, A. G. Baca, H. Q. Hou, C. Monier, J. R. Laroche, F. Ren, and S. J. Pearton, IEEE Electron Device Lett. 22, 113 (2001).
6. C. Monier, A. G. Baca, P. C. Chang, N. Y. Li, H. Q. Hou, F. Ren, and S. J. Pearton, Electron. Lett. 37, 198 (2001).
7. P. M. Asbeck, R. J. Welty, C. W. Tu, H. P. Xin, and R. E. Welser, Semicond. Sci. Technol. 17, 898 (2002).
8. M. R. Gokhale, J. Wei, H. Wang, and S. R. Forrest, Appl. Phys. Lett. 74, 1287 (1999).
9. R. Mouillet, L. A. de Vaulchier, E. Deleporte, Y. Guldner, L. Travers, and J. C. Harmand, Solid State Commun. 126, 333 (2003).
10. J. S. Wang, A. R. Kovsh, L. Wei, J. Y. Chi, Y. T. Wu, P. Y. Wang, and V. M. Ustinov, Nanotechnology 12, 430 (2001).
11. I. A. Buyanova, W. M. Chen, and C. W. Tu, Semicond. Sci. Technol. 17, 815 (2002).
12. D. L. Young, J. F. Geisz, and T. J. Coutts, Appl. Phys. Lett. 82, 1236 (2003).
13. F. Ishikawa, G. Mussler, K.-J. Friedland, H. Kostial, K. Hagenstein, L. Daweritz, and K. H. Ploog, Appl. Phys. Lett. 87, 262112 (2005).
14. A. Hashimoto, T. Yamaguchi, T. Suzuki, and A. Yamamoto, J. Cryst. Growth 278, 532 (2005).
15. S. Fahy, A. Lindsay, H. Ouerdane, and E. P. O'Reilly, Phys. Rev. B 74, 035203 (2006).
16. M. P. Vaughan and B. K. Ridley, Phys. Rev. B 72, 075211 (2005).
17. S. W. Johnston and S. R. Kurtz, J. Vac. Sci. Technol. A 24, 1252 (2006).
18. Y. G. Hong, C. W. Tu, and R. K. Ahrenkiel, J. Cryst. Growth 227-228, 536 (2001).
19. D. Fowler, O. Makarovsky, A. Patane, L. Eaves, L. Geelhaar, and H. Reichert, Phys. Rev. B 69, 153305 (2004).
20. C. Jiang, D. C. Tsui, and G. Weimann, Appl. Phys. Lett. 53, 1533 (1988).
21. A. Gold, Phys. Rev. B 44, 8818 (1991).
22. K. Hirakawa and H. Sakaki, Phys. Rev. B 33, 8291 (1986).
23. D. W. Gotthold, Ph.D. thesis, University of Texas, 2000.
24. C. P. A. Mulcahy, S. J. Barker, R. S. Williams, M. Hopkinson, M. J. Ashwin, P. N. Stavrinou, G. Parry, S. Biswas, and T. S. Jones, Appl. Surf. Sci. 252, 7218 (2006).
25. S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, H. E. Petersen, and J. S. Harris, J. Cryst. Growth 227, 506 (2001).
26. M. Reason, Ph.D. thesis, University of Michigan, 2006.
27. K. Reginski, J. Muszalski, V. V. Preobrazhenskii, and D. I. Lubyshev, Thin Solid Films 267, 54 (1995).
28. L. P. Ramberg, J. Westin, and T. G. Andersson, J. Vac. Sci. Technol. B 5, 1654 (1987).
29. W. Ye, S. Hanson, M. Reason, X. Weng, and R. S. Goldman, J. Vac. Sci. Technol. B 23, 1736 (2005).
30. H. Q. Hou, B. W. Liang, T. P. Chin, and C. W. Tu, Appl. Phys. Lett. 59, 292 (1991).
31. M. Reason, H. A. McKay, W. Ye, S. Hanson, R. S. Goldman, and V. Rotberg, Appl. Phys. Lett. 85, 1692 (2004).
32. H. L. Stormer, A. C. Gossard, W. Wiegmann, and K. Baldwin, Appl. Phys. Lett. 39, 912 (1981).
33. G. Weimann, W. Schlapp, and H. Burkhard, Phys. Status Solidi A 64, K99 (1981).
34. J. Tuebert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch, Appl. Phys. Lett. 84, 747 (2004).
35. W. Walukiewicz, L. Lagowski, L. Jastrzebski, M. Lichtensteiger, and H. C. Gatos, J. Appl. Phys. 50, 899 (1979).
36. S. Tomic, E. P. O'Reilly, P. J. Klar, H. Gruning, W. Heimbrodt, W. M. Chen, and I. A. Buyanova, Phys. Rev. B 69, 245305 (2004).
37. S. Fahy and E. P. O'Reilly, Appl. Phys. Lett. 83, 3731 (2003).
38. R. P. Campion, K. W. Edmonds, L. X. Zhao, K. Y. Wang, C. T. Foxon, B. L. Gallagher, and C. R. Staddon, J. Cryst. Growth 251, 311 (2003).
39. J. H. Neave, P. Blood, and B. A. Joyce, Appl. Phys. Lett. 36, 311 (1980).
40. C. H. Fischer and P. Bhattacharya, J. Appl. Phys. 96, 4176 (2004).
41. S. B. Zhang and S.-H. Wei, Phys. Rev. Lett. 86, 1789 (2001).
42. K. von Klitzing, G. Dorda, and M. Pepper, Phys. Rev. Lett. 45, 494 (1980).
43. J. H. Davies, The Physics of Low-Dimensional Semiconductors (Cambridge University Press, Cambridge, UK, 1998), pp. 356-365.
44. F. Bosc, J. Sicart, and J. L. Robert, Semicond. Sci. Technol. 14, 64 (1999).
45. J. J. Harris, J. A. Pals, and R. Woltjer, Rep. Prog. Phys. 52, 1217 (1989).
46. W. G. Bi and C. W. Tu, Appl. Phys. Lett. 70, 1608 (1997).
47. U. Tisch, E. Finkman, and J. Salzman, Appl. Phys. Lett. 81, 463 (2002).
48. B. Arnaudov, T. Paskova, S. Evtimova, E. Valcheva, M. Heuken, and B. Monemar, Phys. Rev. B 67, 045314 (2003).
49. M. Knudsen, Ann. Phys. 29, 179 (1909).
50. N. F. Ramsey, Molecular Beams (Clarendon, Oxford, 1963).