Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures

Solid State Communications

Volumn 126, Issue 6, 2003, Pages 333-337

  Mouillet, Robert ^a   De Vaulchier, Louis Anne ^a   Deleporte, Emmanuelle ^a   Guldner, Yves ^a   Travers, Laurent ^b   Harmand, Jean Christophe ^b  

^a ECOLE NORMALE SUPÉRIEURE   (France)

^b CNRS   (France)

Author keywords

A. III V nitrides; A. Semiconductor heterojunctions; D. Cyclotron resonance; D. Electronic transport

Indexed keywords

CARRIER MOBILITY; CYCLOTRON RESONANCE; ELECTRONS; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE;

QUANTUM OSCILLATIONS;

HETEROJUNCTIONS;

EID: 0037401577     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(03)00140-6     Document Type: Article

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