Impact of N-induced potential fluctuations on the electron transport in Ga(As,N)

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Ishikawa, F ^a   Mussler, G ^a   Friedland, K J ^a   Kostial, H ^a   Hagenstein, K ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CONCENTRATION (PROCESS); ELECTRON TRANSPORT PROPERTIES; GALLIUM ALLOYS; NITROGEN; RAPID THERMAL ANNEALING;

ELECTRON LOCALIZATION; POTENTIAL FLUCTUATIONS; THERMAL ANNEALING; THERMALLY ACTIVATED CONDUCTIVITY;

ELECTRON TRANSITIONS;

EID: 29744439729     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158511     Document Type: Article

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