Comparison of GaInNAs laser diodes based on two to five quantum wells

IEEE Journal of Quantum Electronics

Volumn 40, Issue 4, 2004, Pages 337-342

  Gollub, Dirk ^a   Moses, Susanne ^b   Forchel, Alfred ^b  

^a NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Epitaxial growth; Gain measurement; GaInNAs; Gallium compounds; Nitrogen compounds; Optical fiber telecommunication; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; GAIN MEASUREMENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

GALLIUM INDIUM NITROGEN ARSENIDE; OPTICAL FIBER COMMUNICATION; SEPARATE CONFINEMENT HETEROSTRUCTURE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 1942489122     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.825112     Document Type: Article

References (17)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: a novel material for long-wavelength range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 1273-1275, 1996.
2. M. Hetterich, M. D. Dawson, A. Y. Egorov, D. Bernklau, and H. Riechert, "Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen content," Appl. Phys. Lett., vol. 76, no. 8, pp. 1030-1032, 2000.
3. C. K. Kim and Y. H. Lee, "Thermal characteristics of optical gain for GaInNAs quantum wells at 1.3 μm," Appl. Phys. Lett., vol. 79, no. 19, pp. 3038-3040, 2001.
4. M. Fischer, D. Gollub, and A. Forchel, "1.3μm GaInAsN laserdiodes with improved high temperature performance," Jpn. J. Appl. Phys., vol. 41, pp. 1161-1163, 2002.
5. D. Gollub, M. Fischer, M. Kamp, and A. Forchel, "1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes," Appl. Phys. Lett., vol. 81, no. 23, pp. 4330-4331, 2002.
6. A. Ramakrishnan, G. Steinle, D. Supper, C. Degen, and G. Ebbinghaus, "Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3μm VCSEL with GaInNAs active region," Electron. Lett., vol. 38, no. 7, pp. 322-324, 2002.
7. D. Gollub, M. Fischer, and A. Forchel, "Toward high performance GaInAsN/GaAs laser diodes in 1.5 μm range," Electron. Lett., vol. 38, no. 20, pp. 1138-1139, 2002.
8. C. K. Kim, T. Miyamoto, and Y. H. Lee, "Design considerations of GaInNAs-GaAs quantum wells, effects of indium and nitrogen mole fractions," Jpn. J. Appl. Phys., vol. 37, no. 11, pp. 5994-5996, 1998.
9. G. Patriarche, L. Largeau, J. C. Harmand, and D. Gollub, "Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate," Appl. Phys. Lett., vol. 84, no. 2, pp. 203-205, 2004.
10. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
11. J. C. Dries, M. R. Gokhale, H. Venohara, and S. R. Forrest, "Strain-compensated InGa(As)P-InAsP active region for 1.3 μm wavelength lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 42-44, Jan. 1998.
12. H. Shimizu, K. Kumada, N. Yamanaka, N. Iwai, T. Mukaihara, and A. Kasukawa, "1.3-μm InAsP modulation-doped MQW lasers," IEEE J. Quantum Electron., vol. 36, pp. 728-735, June 2000.
13. S. J. Sweeney, S. R. Jin, A. R. Adams, T. Higashi, H. Riechert, and P. J. A. Thijs, "A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation," in Conf. Dig. 18th IEEE Int. Semicond. Laser, 2002, paper TuA6, pp. 43-44.
14. B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double-heterostructure injection lasers," J. Appl. Phys., vol. 46, no. 3, pp. 1299-1305, 1975.
15. P. W. A. McIlroy, A. Kurobe, and Y. Uematsu, "Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 1958-1963, Dec. 1985.
16. Z. Pan, L. H. Li, Y. W. Lin, B. Q. Sun, D. S. Jiang, and W. K. Ge, "Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen content," Appl. Phys. Lett., vol. 78, no. 15, pp. 2217-2219, 2001.
17. W. J. Fan, S. T. Ng, S. F. Yoon, M. F. Li, and T. C. Chong, "Effects of tensile strain in barrier in optical gain spectra of GaInNAs/GaAsN quantum wells," J. Appl. Phys., vol. 93, no. 9, pp. 5836-5838, 2003.