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Volumn 227-228, Issue , 2001, Pages 536-540
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Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice
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Author keywords
A3. Molecular beam epitaxy; A3. Superlattices; B1. Nitrides
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRON MOBILITY;
HALL EFFECT;
MASS TRANSFER;
MOLECULAR BEAM EPITAXY;
PHOTOCONDUCTIVITY;
PHOTOLUMINESCENCE;
RAPID THERMAL ANNEALING;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
GAS SOURCE MOLECULAR BEAM EPITAXY;
PHOTOCONDUCTIVE DECAYS;
SHORT PERIOD SUPERLATTICES;
SEMICONDUCTOR SUPERLATTICES;
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EID: 0035398173
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00762-X Document Type: Conference Paper |
Times cited : (18)
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References (15)
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