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Volumn 227-228, Issue , 2001, Pages 536-540

Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice

Author keywords

A3. Molecular beam epitaxy; A3. Superlattices; B1. Nitrides

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; HALL EFFECT; MASS TRANSFER; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

EID: 0035398173     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00762-X     Document Type: Conference Paper
Times cited : (18)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.