MBE growth of high-quality GaAsN bulk layers

Nanotechnology

Volumn 12, Issue 4, 2001, Pages 430-433

  Wang, J S ^a   Kovsh, A R ^a,b   Wei, L ^a   Chi, J Y ^a   Wu, Y T ^a   Wang, P Y ^a   Ustinov, V M ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE;

BULK LAYERS; PLASMA CELL APERTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035679330     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/12/4/308     Document Type: Conference Paper

References (14)