RF-plasma source qualification and compositional characterisation of GaNAs superlattices using SIMS

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7218-7220

  Mulcahy, C P A ^a   Barker, S J ^b   Williams, R S ^b   Hopkinson, M ^c   Ashwin, M J ^b   Stavrinou, P N ^b   Parry, G ^b   Biswas, S ^a   Jones, T S ^b  

^a Cascade Scientific Ltd   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Dilute nitrides; GaNAs; MBE; SIMS

Indexed keywords

MOLECULAR BEAM EPITAXY; NITRIDES; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SUPERLATTICES; TELECOMMUNICATION SYSTEMS;

DILUTE NITRIDES; GAINNAS; GANAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33747159093     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.141     Document Type: Article

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