The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 311-316

  Campion, R P ^a   Edmonds, K W ^a   Zhao, L X ^a   Wang, K Y ^a   Foxon, C T ^a   Gallagher, B L ^a   Staddon, C R ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

A1. Spintronics; B1. GaMnAs; B2. Semiconducting materials

Indexed keywords

ANNEALING; ARSENIC; DIMERS; FILM GROWTH; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY;

METALLIC CONDUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037380665     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02291-1     Document Type: Conference Paper

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