Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 747-749

  Teubert, J ^a   Klar, P J ^a   Heimbrodt, W ^a   Volz, K ^a   Stolz, W ^a   Thomas, P ^a   Leibiger, G ^b   Gottschalch, V ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHEMICAL MODIFICATION; DIAMAGNETIC MATERIALS; ELASTIC MODULI; ELECTRON MOBILITY; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; PHONONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ANDERSON LOCALIZATION; DOPING DENSITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 1242286916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1642760     Document Type: Article

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